Thermally stable magnetic elements utilizing spin transfer and an MRAM device using the magnetic element

• US 20040061154A1
• Filed: 09/27/2002
• Published: 04/01/2004
• Est. Priority Date: 09/27/2002
• Status: Active Grant

• Current Assignee: Samsung Semiconductor Incorporated (Samsung Electronics Co. Ltd.)
• Original Assignee: Grandis, Inc. (Samsung Electronics Co. Ltd.)
• Inventors: Nguyen, Paul P., Huai, Yiming
• Granted Patent: US 6,838,740 B2
• Time in Patent Office: Days
• US Class Current: 257/295
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: G11C 11/16 using elements in which the storage effect is based on magnetic spin effect
• CPC Class Codes: H01F 10/3272 by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
• CPC Class Codes: H01F 10/3286 Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
• CPC Class Codes: H01F 10/329 Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
• CPC Class Codes: H01F 41/302 for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices spin-exchange-coupled multilayers H01F10/32
• CPC Class Codes: H10B 61/22 of the field-effect transistor [FET] type
• CPC Class Codes: H10N 50/10 Magnetoresistive devices

Abstract

A method and system for providing a magnetic element capable of being written using spin-transfer effect while being thermally stable and a magnetic memory using the magnetic element are disclosed. The magnetic element includes a first, second and third pinned layers, first and second nonmagnetic layers, a free layer and a nonmagnetic spacer layers. The first, second and third pinned layers are ferromagnetic and have first, second and third magnetizations pinned in first, second and third directions. The first and second nonmagnetic layers include first and second diffusion barriers, respectively. The first and second nonmagnetic layers are between the first and second pinned layers and the second and third pinned layers, respectively. The first and second pinned layers and the second and third pinned layers are antiferromagnetically coupled. The nonmagnetic spacer layer is conductive and resides between the free layer and the third pinned layer. In addition, performance can be further improved by doping Co containing ferromagnetic layers with Cr and/or Pt.

Claims

1. A magnetic element comprising:

a first pinned layer, the first pinned layer being ferromagnetic and having a first magnetization pinned in a first direction

a first nonmagnetic layer, the first nonmagnetic layer being conductive and including a first diffusion barrier;

a second pinned layer, the second pinned layer being ferromagnetic and having a second magnetization pinned in a second direction, the first nonmagnetic layer being between the first pinned layer and the second pinned layer, the second pinned layer being antiferromagnetically coupled with the first pinned layer;

a second nonmagnetic layer, the second nonmagnetic layer being conductive and including a second diffusion barrier;

a third pinned layer, the third pinned layer being ferromagnetic and having a third magnetization pinned in a third direction, the second nonmagnetic layer being between the third pinned layer and the second pinned layer, the third pinned layer being antiferromagnetically coupled with the second pinned layer;

a free layer, the free layer being ferromagnetic and having a free layer magnetization; and

a nonmagnetic spacer layer, the nonmagnetic spacer layer being conductive, the nonmagnetic spacer layer being between the free layer and the third pinned layer.

2. The magnetic element of claim 1 wherein the first diffusion barrier and the second diffusion barrier include Ru.

3. The magnetic element of claim 1 further comprising:

a fourth pinned layer, the fourth pinned layer being ferromagnetic and having a fourth magnetization, the fourth magnetization being pinned in a fourth direction;

a barrier layer, the barrier layer being an insulator and having a thickness that allows tunneling through the barrier layer, the barrier layer being between the free layer and the fourth pinned layer;

wherein the magnetic element is configured to allow the free layer magnetization to change direction due to spin transfer when a write current is passed through the magnetic element.

4. The magnetic element of claim 3 wherein the fourth pinned layer includes:

a first ferromagnetic layer having a fifth magnetization, the fifth magnetization being pinned in a fifth direction, the first ferromagnetic layer being adjacent to the barrier layer;

a third nonmagnetic layer, the third nonmagnetic layer being conductive and including a third diffusion barrier;

a second ferromagnetic layer, the second ferromagnetic layer being ferromagnetic and having a sixth magnetization, the sixth magnetization being pinned in a sixth direction, the second ferromagnetic layer being antiferromagnetically coupled with the first ferromagnetic layer, the fourth magnetization being the net magnetization of the first ferromagnetic layer and the second ferromagnetic layer.

5. The magnetic element of claim 4 wherein the fifth direction of the fifth magnetization of the first ferromagnetic layer is opposite to the third direction of the third magnetization of the third pinned layer.

6. The magnetic element of claim 4 further comprising:

an antiferromagnetic layer adjacent to the second ferromagnetic layer, the antiferromagnetic layer including PtMn.

7. The magnetic element of claim 1 further comprising:

an antiferromagnetic layer adjacent to the first pinned layer, the antiferromagnetic layer including PtMn.

8. The magnetic element of claim 3 wherein the first pinned layer, the second pinned layer, the third pinned layer, and the fourth pinned layer and the free layer include an amount of Pt or Cr.

9. The magnetic element of claim 8 wherein the amount of Pt or Cr is between one and five atomic percent.

10. The magnetic element of claim 3 wherein the magnetic element has a width of approximately 100 nm.

11. The magnetic element of claim 3 wherein the magnetic element has a depth of approximately 50 nm.

12. The magnetic element of claim 1 wherein the free layer is a synthetic free layer.

13. A magnetic memory device comprising:

a plurality of magnetic cells including a plurality of magnetic elements, each of the plurality of magnetic elements including a first pinned layer, a first nonmagnetic layer, a second pinned layer, a second nonmagnetic layer, a third pinned layer, a nonmagnetic spacer layer and a free layer, the first pinned layer being ferromagnetic and having a first magnetization pinned in a first direction, the first nonmagnetic layer being conductive and including a first diffusion barrier, the second pinned layer being ferromagnetic and having a second magnetization pinned in a second third direction, the first nonmagnetic layer being between the first pinned layer and the second pinned layer, the second pinned layer being antiferromagnetically coupled with the first pinned layer, the second nonmagnetic layer being conductive and including a second diffusion barrier, the third pinned layer being ferromagnetic and having a third magnetization pinned in a third direction, the second nonmagnetic layer being between the third pinned layer and the second pinned layer, the third pinned layer being antiferromagnetically coupled with the second pinned layer, the free layer being ferromagnetic and having a free layer magnetization, the nonmagnetic spacer layer being conductive, the nonmagnetic spacer layer being between the free layer and the third pinned layer;

a plurality of row lines coupled to the plurality of magnetic cells; and

a plurality of column lines coupled with the plurality of cells, the plurality of row lines and the plurality of column lines for selecting a portion of the plurality of magnetic cells for reading and writing.

14. The magnetic memory device of claim 13 wherein the first diffusion barrier and the second diffusion barrier include Ru.

15. The magnetic memory device of claim 13 wherein each of the plurality of magnetic elements further includes:

a fourth pinned layer, the fourth pinned layer being ferromagnetic and having a fourth magnetization, the fourth magnetization being pinned in a fourth direction;

a barrier layer, the barrier layer being an insulator and having a thickness that allows tunneling through the barrier layer, the barrier layer being between the free layer and the fourth pinned layer;

wherein the magnetic element is configured to allow the free layer magnetization to change direction due to spin transfer when a write current is passed through the magnetic element.

16. The magnetic memory device of claim 15 wherein the fourth pinned layer includes:

a first ferromagnetic layer having a fifth magnetization, the fifth magnetization being pinned in a fifth direction, the first ferromagnetic layer being adjacent to the barrier layer;

a third nonmagnetic layer, the third nonmagnetic layer being conductive and including a third diffusion barrier;

a second ferromagnetic layer, the second ferromagnetic layer being ferromagnetic and having a sixth magnetization, the sixth magnetization being pinned in a sixth direction, the second ferromagnetic layer being antiferromagnetically coupled with the first ferromagnetic layer, the fourth magnetization being the net magnetization of the first ferromagnetic layer and the second ferromagnetic layer.

17. The magnetic memory device of claim 16 wherein the third direction of the third magnetization of the third pinned layer is opposite to the fifth direction of the first ferromagnetic layer.

18. The magnetic memory device of claim 16 wherein each of the plurality of magnetic element further includes:

an antiferromagnetic layer adjacent to the first pinned layer, the antiferromagnetic layer including PtMn.

19. The magnetic memory device of claim 16 wherein each of the plurality of magnetic elements further includes:

an antiferromagnetic layer adjacent to the second ferromagnetic layer, the antiferromagnetic layer including PtMn.

20. The magnetic memory device of claim 15 wherein the first pinned layer, the second pinned layer, the third pinned layer, the fourth pinned layer and the free layer include an amount of Pt or Cr.

21. The magnetic memory device of claim 20 wherein the amount of Pt or Cr is between one and five atomic percent.

22. The magnetic memory device of claim 15 wherein each of the plurality of magnetic elements has a width of approximately 100 nm.

23. The magnetic memory device of claim 15 wherein the magnetic element has a depth of approximately 50 nm.

24. The magnetic memory device of claim 14 wherein the free layer is a synthetic free layer.

25. A method for utilizing a magnetic memory comprising the steps of:

(a) in a write mode, writing to a first portion of a plurality of magnetic cells by driving a write current in a CPP configuration through the a first portion of a plurality of magnetic elements, each of the plurality of magnetic elements including a first pinned layer, a first nonmagnetic layer, a second pinned layer, a second nonmagnetic layer, a third pinned layer, a nonmagnetic spacer layer and a free layer, the first pinned layer being ferromagnetic and having a first magnetization pinned in a first direction, the first nonmagnetic layer being conductive and including a first diffusion barrier, the second pinned layer being ferromagnetic and having a second magnetization pinned in a second third direction, the first nonmagnetic layer being between the first pinned layer and the second pinned layer, the second pinned layer being antiferromagnetically coupled with the first pinned layer, the second nonmagnetic layer being conductive and including a second diffusion barrier, the third pinned layer being ferromagnetic and having a third magnetization pinned in a third direction, the second nonmagnetic layer being between the third pinned layer and the second pinned layer, the third pinned layer being antiferromagnetically coupled with the second pinned layer, the free layer being ferromagnetic and having a free layer magnetization, the nonmagnetic spacer layer being conductive, the nonmagnetic spacer layer being between the free layer and the third pinned layer;

(b) in a read mode, reading a signal from a second portion of the plurality of cells.

26. The method of claim 25 wherein each of the plurality of magnetic elements further includes:

a fourth pinned layer, the fourth pinned layer being ferromagnetic and having a fourth magnetization, the fourth magnetization being pinned in a fourth direction;

a barrier layer, the barrier layer being an insulator and having a thickness that allows tunneling through the barrier layer, the barrier layer being between the free layer and the fourth pinned layer;

wherein the magnetic element is configured to allow the free layer magnetization to change direction due to spin transfer when a write current is passed through the magnetic element.

27. A method for utilizing a magnetic element comprising the steps of:

(a) in a write mode, driving a write current in a CPP configuration through the magnetic element, the magnetic element including a first pinned layer, a first nomagnetic layer, a second pinned layer, a second nonmagnetic layer, a third pinned layer, a nonmagnetic spacer layer and a free layer, the first pinned layer being ferromagnetic and having a first magnetization pinned in a first direction, the first nonmagnetic layer being conductive and including a first diffusion barrier, the second pinned layer being ferromagnetic and having a second magnetization pinned in a second third direction, the first nonmagnetic layer being between the first pinned layer and the second pinned layer, the second pinned layer being antiferromagnetically coupled with the first pinned layer, the second nonmagnetic layer being conductive and including a second diffusion barrier, the third pinned layer being ferromagnetic and having a third magnetization pinned in a third direction, the second nonmagnetic layer being between the third pinned layer and the second pinned layer, the third pinned layer being antiferromagnetically coupled with the second pinned layer, the free layer being ferromagnetic and having a free layer magnetization, the nonmagnetic spacer layer being conductive, the nonmagnetic spacer layer being between the free layer and the third pinned layer;

(b) in a read mode, reading a signal from the magnetic element by driving a read current through the magnetic element in the CPP configuration, the read current being less than the write current.

28. The method of claim 27 wherein each of the plurality of magnetic elements further includes:

a fourth pinned layer, the fourth pinned layer being ferromagnetic and having a fourth magnetization, the fourth magnetization being pinned in a fourth direction;

a barrier layer, the barrier layer being an insulator and having a thickness that allows tunneling through the barrier layer, the barrier layer being between the free layer and the fourth pinned layer;

wherein the magnetic element is configured to allow the free layer magnetization to change direction due to spin transfer when a write current is passed through the magnetic element.

29. The method of claim 28 wherein the write current results in the spin transfer due at least to majority and/or minority spin polarized electrons traveling from the third pinned layer to the free layer.

30. The method of claim 28 wherein the write current results in the spin transfer due at least to the majority and/or minority spin polarized electrons traveling from the fourth pinned layer to the free layer.

31. The method of claim 28 wherein a portion of the signal is due to the magnetoresistance resulting from an orientation of the free layer magnetization of the free layer with respect to the fourth magnetization of the fourth pinned layer.

32. A method for providing a magnetic element comprising the steps of:

(a) providing a first pinned layer, the first pinned layer being ferromagnetic and having a first magnetization pinned in a first direction

(b) providing a first nonmagnetic layer, the first nonmagnetic layer being conductive and including a first diffusion barrier;

(c) providing a second pinned layer, the second pinned layer being ferromagnetic and having a second magnetization pinned in a second third direction, the first nonmagnetic layer being between the first pinned layer and the second pinned layer, the second pinned layer being antiferromagnetically coupled with the first pinned layer;

(d) providing a second nonmagnetic layer, the second nonmagnetic layer being conductive and including a second diffusion barrier;

(e) providing a third pinned layer, the third pinned layer being ferromagnetic and having a third magnetization pinned in a third direction, the second nonmagnetic layer being between the third pinned layer and the second pinned layer, the third pinned layer being antiferromagnetically coupled with the second pinned layer;

(f) providing a free layer, the free layer being ferromagnetic and having a free layer magnetization; and

(g) providing a nonmagnetic spacer layer, the nonmagnetic spacer layer being conductive, the nonmagnetic spacer layer being between the free layer and the third pinned layer.

33. The method of claim 32 wherein the first diffusion barrier and the second diffusion barrier include Ru.

34. The method of claim 32 further comprising:

(h) providing a fourth pinned layer, the fourth pinned layer being ferromagnetic and having a fourth magnetization, the fourth magnetization being pinned in a fourth direction; and

(i) providing a barrier layer, the barrier layer being an insulator and having a thickness that allows tunneling through the barrier layer, the barrier layer being between the free layer and the fourth pinned layer;

wherein the magnetic element is configured to allow the free layer magnetization to change direction due to spin transfer when a write current is passed through the magnetic element.

35. The method of claim 34 wherein the fourth pinned layer providing step (h) includes the steps of:

(h1) providing a first ferromagnetic layer having a fifth magnetization, the fifth magnetization being pinned in a fifth direction, the first ferromagnetic layer being adjacent to the barrier layer;

(h2) providing a third nonmagnetic layer, the third nonmagnetic layer being conductive and including a third diffusion barrier;

(h3) providing a second ferromagnetic layer, the second ferromagnetic layer being ferromagnetic and having a sixth magnetization, the sixth magnetization being pinned in a sixth direction, the second ferromagnetic layer being antiferromagnetically coupled with the first ferromagnetic layer, the fourth magnetization being the net magnetization of the first ferromagnetic layer and the second ferromagnetic layer.

36. The method of claim 35 wherein the third direction of the third magnetization of the third pinned layer is opposite to the fifth direction of the fifth magnetization of the first ferromagnetic layer.

37. The method of claim 35 further comprising the steps of:

(i) providing an antiferromagnetic layer adjacent to the first pinned layer, the antiferromagnetic layer including PtMn.

38. The method of claim 35 further comprising the step of:

(i) providing an antiferromagnetic layer adjacent to the second ferromagnetic layer, the antiferromagnetic layer including PtMn.

39. The method of claim 34 wherein the first pinned layer, the second pinned layer, the third pinned layer, the fourth pinned layer and the free layer include an amount of Pt or Cr.

40. The method of claim 39 wherein the amount of Pt or Cr is between one and five atomic percent.

41. The method of claim 34 wherein the magnetic element has a width of approximately 100 nm.

42. The method of claim 34 wherein the magnetic element has a depth of approximately 50 nm.

43. The method of claim 33 wherein the free layer is a synthetic free layer.