High power MCM package

• US 20040061221A1
• Filed: 07/14/2003
• Published: 04/01/2004
• Est. Priority Date: 07/15/2002
• Status: Active Grant

• Current Assignee: Infineon Technologies Americas Corp. (Infineon Technologies AG)
• Original Assignee: International Rectifier Corporation (Infineon Technologies AG)
• Inventors: Schaffer, Christopher P.
• Granted Patent: US 6,946,740 B2
• Time in Patent Office: Days
• US Class Current: 257/723
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/06181 On opposite sides of the body
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/33181 On opposite sides of the body
• CPC Class Codes: H01L 2224/371 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/37147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/37599 Material
• CPC Class Codes: H01L 2224/40137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/40139 with an intermediate bond, e.g. continuous strap daisy chain
• CPC Class Codes: H01L 2224/40247 Connecting the strap to a bond pad of the item
• CPC Class Codes: H01L 2224/73253 Bump and layer connectors
• CPC Class Codes: H01L 2224/73263 Layer and strap connectors
• CPC Class Codes: H01L 2224/83801 Soldering or alloying
• CPC Class Codes: H01L 2224/8385 using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
• CPC Class Codes: H01L 2224/84801 Soldering or alloying
• CPC Class Codes: H01L 2224/8485 using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
• CPC Class Codes: H01L 24/37 of an individual strap connector
• CPC Class Codes: H01L 24/40 : of an individual strap connector
• CPC Class Codes: H01L 24/84 : using a strap connector
• CPC Class Codes: H01L 25/072 : the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/0781 : being an ohmic electrical conductor
• CPC Class Codes: H01L 2924/12032 : Schottky diode
• CPC Class Codes: H01L 2924/1301 : Thyristor
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/181 : Encapsulation

Abstract

A multi-chip module that includes a conductive element to serve as an electrical connector for electrically connecting respective electrical contacts of at least two power semiconductor devices and serving as an output connector. The conductive element improving heat transfer from the power semiconductor devices through the top of the module.

Claims

1. A multichip module comprising:

a substrate having a first conductive pad, a second conductive pad and a third conductive pad disposed on a major surface thereof;

a conductive element, said conductive element including a web portion and a connector extending from a first major surface of said web portion;

a first semiconductor die and a second semiconductor die, each semiconductor die having a first contact of a first designation disposed on a first major surface thereof and a second contact of a second designation disposed on a second opposing major surface thereof;

wherein said first contact of said first semiconductor die is electrically connected to said first conductive pad, said second contact of said second semiconductor die is connected to said second conductive pad, said connector is connected to said third conductive pad, and said second contact of said first semiconductor die and said first contact of said second semiconductor die are connected to said first major surface of said web portion.

2. A multichip module according to claim 1, wherein said substrate is one of an insulated metal substrate, double bonded copper and a lead frame structure.

3. A multichip module according to claim 1, wherein said semiconductor die are MOSFETs, said first contacts of which are source contacts and said second contacts of which are drain contacts.

4. A multichip module according to claim 1, wherein each of said semiconductor die is one of MOSFET and IGBT.

5. A multichip module according to claim 1, further comprising a molded housing.

6. A multichip module according to claim 5, wherein said conductive element is at least partially exposed through said molded housing to dissipate heat from said semiconductor die.

7. A multichip module according to claim 1, wherein said web portion includes two free ends, and said connector is disposed at one end of said web portion.

8. A multichip module according to claim 1, wherein said web portion includes two free ends, said connector is disposed between said two free ends.

9. A multichip module according to claim 1, wherein said element is L-shaped.

10. A multichip module according to claim 1, wherein said element is T-shaped.

11. A multichip module according to claim 1, further comprising a heat sink in thermal contact with said substrate.

12. A multichip module according to claim 1, further comprising a heat sink in thermal communication with said element.

13. A multichip module according to claim 1, wherein said web portion includes a plurality of ridges extending from a second major surface of said web portion.

14. A multichip module according to claim 1, wherein said web portion includes a recess at each opposing end thereof.

15. A multichip module according to claim 1, wherein said web portion includes a recess at one end thereof.

16. A multichip module according to claim 1, wherein said connector is a ball contact.

17. A multichip module according to claim 1, wherein said element includes another ball contact, each of said ball contacts being disposed at a respective end of said web portion.

18. A multichip module comprising:

a substrate having a first conductive pad, a second conductive pad and a third conductive pad disposed on a major surface thereof;

a conductive element, said conductive element including a web portion and a connector extending from a first major surface of said web portion;

a first MOSFET and a second MOSFET, each MOSFET having a source contact disposed on a first major surface thereof and a drain contact on a second opposing major surface thereof;

wherein said source contact of said first semiconductor die is electrically connected to said first conductive pad, said drain contact of said second semiconductor die is connected to said second conductive pad, said connector is connected to said third conductive pad, and said drain contact of said first semiconductor die and said source contact of said second semiconductor die are connected to said first major surface of said web portion.

19. A multichip module according to claim 18, wherein said substrate is one of an insulated metal substrate and double bonded copper.

20. A multichip module according to claim 18, further comprising a molded housing.

21. A multichip module according to claim 18, wherein said web portion includes two free ends, and said connector is disposed at one end of said web portion.

22. A multichip module according to claim 18, wherein said web portion includes two free ends, said connector is disposed between said two free ends.

23. A multichip module according to claim 18, wherein said element is L-shaped.

24. A multichip module according to claim 18, wherein said element is T-shaped.

25. A multichip module according to claim 18, further comprising a heat sink in thermal contact with said substrate.

26. A multichip module according to claim 18, further comprising a heat sink in thermal communication with said element.

27. A multichip module according to claim 18, wherein said web portion includes a plurality of ridges extending from a second major surface of said web portion.

28. A multichip module according to claim 18, wherein said web portion includes a recess at each opposing end thereof.

29. A multichip module according to claim 18, wherein said web portion includes a recess at one end thereof.

30. A multichip module according to claim 18, wherein said connector is a ball contact.

31. A multichip module according to claim 30, wherein said element includes another ball contact, each of said ball contacts being disposed at a respective end of said web portion.