Method and apparatus for an improved upper electrode plate in a plasma processing system
First Claim
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1. An upper electrode for a plasma processing system comprising:
- an electrode plate comprising a first surface for coupling said electrode plate to an upper assembly, a second surface comprising a plasma surface configured to face a processing space in said plasma processing system and a mating surface for mating said electrode plate with said plasma processing system, a peripheral edge, and one or more gas injection orifices coupled to said first surface and said second surface and configured to couple a processing gas to said processing space; and
a protective barrier coupled to a plurality of exposed surfaces of said electrode plate, said exposed surfaces comprising said plasma surface.
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Abstract
The present invention presents an improved upper electrode for a plasma processing system, wherein the design and fabrication of an electrode plate coupled to an upper assembly advantageously provides gas injection of a process gas with substantially minimal erosion of the electrode plate.
255 Citations
79 Claims
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1. An upper electrode for a plasma processing system comprising:
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an electrode plate comprising a first surface for coupling said electrode plate to an upper assembly, a second surface comprising a plasma surface configured to face a processing space in said plasma processing system and a mating surface for mating said electrode plate with said plasma processing system, a peripheral edge, and one or more gas injection orifices coupled to said first surface and said second surface and configured to couple a processing gas to said processing space; and
a protective barrier coupled to a plurality of exposed surfaces of said electrode plate, said exposed surfaces comprising said plasma surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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24. A method of producing an electrode plate for a plasma processing system, said method comprising the steps:
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fabricating said electrode plate, said electrode plate comprising a first surface for coupling said electrode plate to an upper assembly, a second surface comprising a plasma surface configured to face a processing space in said plasma processing system and a mating surface for mating said electrode plate with said plasma processing system, a peripheral edge of said electrode plate, and one or more gas injection orifices coupled to said first surface and said second surface and configured to couple a processing gas to said processing space; and
forming a protective barrier on a plurality of exposed surfaces, said exposed surfaces comprising said plasma surface. - View Dependent Claims (25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51)
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52. A method of producing an electrode plate capable of being coupled to an upper assembly of a plasma processing system, said method comprising the steps:
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fabricating said electrode plate, said electrode plate comprising a first surface for coupling said electrode plate to said upper assembly, a second surface comprising a plasma surface configured to face a processing space in said plasma processing system and a mating surface for mating said electrode plate with said plasma processing system, a peripheral edge of said electrode plate, and one or more gas injection orifices coupled to said first surface and said second surface and configured to couple a processing gas to said processing space;
anodizing said electrode plate to form a surface anodization layer on said electrode plate;
machining exposed surfaces on said electrode plate to remove said surface anodization layer, said exposed surfaces comprising said plasma surface of said second surface of said electrode plate; and
forming a protective barrier on the exposed surfaces. - View Dependent Claims (53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65)
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66. A method of producing an electrode plate capable of being coupled to an upper assembly of a plasma processing system, said method comprising the steps:
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fabricating said electrode plate, said electrode plate comprising a first surface for coupling said electrode plate to said upper assembly, a second surface comprising a plasma surface configured to face a processing space in said plasma processing system and a mating surface for mating said electrode plate with said plasma processing system, a peripheral edge of said electrode plate, and one or more gas injection orifices coupled to said first surface and said second surface and configured to couple a processing gas to said processing space;
masking exposed surfaces on said electrode plate to prevent formation of a surface anodization layer, said exposed surfaces comprising said plasma surface of said second surface of said electrode plate;
anodizing said electrode plate to form said surface anodization layer on said electrode plate;
unmasking said exposed surfaces; and
forming a protective barrier on the exposed surfaces. - View Dependent Claims (67, 68, 69, 70, 71, 72, 73, 74, 75, 76, 77, 78, 79)
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Specification