Process and mask projection system for laser crystallization processing of semiconductor film regions on a substrate
First Claim
1. A process for processing a silicon thin film on a sample, comprising the steps of:
- (a) controlling an irradiation beam generator to emit irradiation beam pulses at a predetermined repetition rate;
(b) separating the irradiation beam pulses into a first set of separated beam pulses and a second set of separated beam pulses;
(c) forwarding the first set of separated beam pulses to irradiate and pass at least portions thereof through a mask to produce a plurality of beamlets; and
(d) providing the second set of separated beam pulses and the beamlets to impinge and irradiate at least one section of the silicon thin film, wherein, when the second set of separated beam pulses and the beamlets simultaneously irradiate the at least one section of the silicon thin film, the second set of the separated beam pulses and the beamlets provide a combined intensity which is sufficient to melt the at least one irradiated section of the silicon thin film throughout an entire thickness of the section.
1 Assignment
0 Petitions
Accused Products
Abstract
A process and system for processing a silicon thin film on a sample are provided. In particular, an irradiation beam generator is controlled to emit irradiation beam pulses at a predetermined repetition rate. These irradiation beam pulses are then separated into a first set of beam pulses and a second set of beam pulses. The first set of beam pulses are caused to irradiate through a mask to produce a plurality of beamlets. The second set of beam pulses and the beamlets are caused to impinge and irradiate at least one section of the silicon thin film. When the second set of beam pulses and the beamlets simultaneously irradiate the section of the silicon thin film, this combination of the beamlets and second set of beam pulses provides a combined intensity which is sufficient to melt the section of the silicon thin film throughout an entire thickness of the section.
184 Citations
56 Claims
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1. A process for processing a silicon thin film on a sample, comprising the steps of:
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(a) controlling an irradiation beam generator to emit irradiation beam pulses at a predetermined repetition rate;
(b) separating the irradiation beam pulses into a first set of separated beam pulses and a second set of separated beam pulses;
(c) forwarding the first set of separated beam pulses to irradiate and pass at least portions thereof through a mask to produce a plurality of beamlets; and
(d) providing the second set of separated beam pulses and the beamlets to impinge and irradiate at least one section of the silicon thin film, wherein, when the second set of separated beam pulses and the beamlets simultaneously irradiate the at least one section of the silicon thin film, the second set of the separated beam pulses and the beamlets provide a combined intensity which is sufficient to melt the at least one irradiated section of the silicon thin film throughout an entire thickness of the section. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A process for processing a silicon thin film on a sample, comprising the steps of:
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(a) controlling an irradiation beam generator arrangement to provide first and second sets of irradiation beam pulses at a predetermined repetition rate;
(b) forwarding the first set of beam pulses to irradiate and pass at least a portion thereof through a mask to produce a plurality of beamlets; and
(c) providing the second set of beam pulses and the beamlets to impinge and irradiate at least one section of the silicon thin film, wherein, when the second set of beam pulses and the beamlets simultaneously irradiate the at least one section of the silicon thin film, the second set of beam pulses and the beamlets provide a combined intensity which is sufficient to melt the at least one irradiated section of the silicon thin film throughout an entire thickness of the section. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
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27. A system for processing a silicon thin film on a sample, comprising:
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a memory storing a computer program; and
a processing arrangement executing the computer program to perform the following steps;
(a) controlling an irradiation beam generator to emit irradiation beam pulses at a predetermined repetition rate, (b) causing the irradiation beam pulses to be separated into a first set of separated beam pulses and a second set of separated beam pulses, (c) forwarding the first set of separated beam pulses to irradiate and pass at least portions thereof through a mask to produce a plurality of beamlets, and (d) causing the second set of separated beam pulses and the beamlets to impinge and irradiate at least one section of the silicon thin film, wherein, when the second set of separated beam pulses and the beamlets, when both simultaneously irradiate the at least one section of the silicon thin film, the second set of separated beam pulses and beamlets provide a combined intensity which is sufficient to melt the at least one irradiated section of the silicon thin film throughout an entire thickness of the section. - View Dependent Claims (28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40)
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41. A system for processing a silicon thin film on a sample, comprising:
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a memory storing a computer program; and
a processing arrangement executing the computer program to perform the following steps;
(a) controlling an irradiation beam generator arrangement to provide first and second sets of irradiation beam pulses at a predetermined repetition rate, (b) causing the first set of beam pulses to be irradiated and pass at least a portion thereof through a mask to produce a plurality of beamlets, and (c) causing the second set of beam pulses and the beamlets to impinge and irradiate at least one section of the silicon thin film, wherein, when the second set of beam pulses and the beamlets simultaneously irradiate the at least one section of the silicon thin film, the second set of beam pulses and the beamlets provide a combined intensity which is sufficient to melt the at least one irradiated section of the silicon thin film throughout an entire thickness of the section. - View Dependent Claims (42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56)
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Specification