Method for forming a semiconductor structure with improved smaller forward voltage loss and higher blocking capability
First Claim
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1. A semiconductor device comprising:
- a) a semiconductor substrate;
b) a first region of a first conductivity type in the semiconductor substrate;
c) a second region of a second conductivity type in the semiconductor substrate;
d) a plurality of charge control electrodes, wherein each charge control electrode in the plurality of charge control electrodes is adapted to be biased differently than other charge control electrodes in the plurality of charge control electrodes; and
e) a dielectric material disposed around each of the stacked charge control electrodes.
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Abstract
A semiconductor device is disclosed. The semiconductor device includes one or more charge control electrodes a plurality of charge control electrodes. The one or more charge control electrodes may control the electric field within the drift region of a semiconductor device.
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Citations
32 Claims
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1. A semiconductor device comprising:
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a) a semiconductor substrate;
b) a first region of a first conductivity type in the semiconductor substrate;
c) a second region of a second conductivity type in the semiconductor substrate;
d) a plurality of charge control electrodes, wherein each charge control electrode in the plurality of charge control electrodes is adapted to be biased differently than other charge control electrodes in the plurality of charge control electrodes; and
e) a dielectric material disposed around each of the stacked charge control electrodes. - View Dependent Claims (2, 3, 4, 6, 7, 8)
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5. The semiconductor device wherein the plurality of charge control electrodes is a first plurality of charge control electrodes and wherein the semiconductor device includes a second plurality of charge control electrodes.
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9. A field effect transistor comprising:
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a) a semiconductor substrate of a first conductivity type having a major surface, a drift region, and a drain region;
b) a well region of a second conductivity type formed in the semiconductor substrate;
c) a source region of the first conductivity type formed in the well region;
d) a gate electrode formed adjacent to the source region;
e) a plurality of stacked charge control electrodes buried within the drift region, wherein each charge control electrode of the plurality of stacked charge control electrodes is adapted to be biased differently than other charge control electrodes in the plurality of charge control electrodes; and
f) a dielectric material disposed around each of the stacked charge control electrodes. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17)
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18. A method for forming a semiconductor device, the method comprising:
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a) providing a semiconductor substrate having a first region of a first conductivity type;
b) forming a region of a second conductivity type in the semiconductor substrate;
c) forming a first charge control electrode; and
d) forming a second charge control electrode, wherein the first charge control electrode is adapted to be biased differently than the first charge control electrode. - View Dependent Claims (19, 20, 21, 22, 23, 24)
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25. A field effect transistor comprising:
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a) a semiconductor substrate of a first conductivity type having a major surface, a drift region, and a drain region;
b) a well region of a second conductivity type formed in the semiconductor substrate;
c) a source region of the first conductivity type formed in the well region;
d) a source contact layer coupled to the source region;
e) a gate electrode formed adjacent to the source region;
f) a charge control electrode buried in the drift region, wherein the charge control electrode is adapted to be biased at a different potential than the gate electrode or the source contact layer, and is adapted to control the electric field in the drift region; and
g) a dielectric material disposed around the charge control electrode. - View Dependent Claims (26, 27, 28, 29)
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30. A method for forming a field effect transistor comprising:
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a) providing a semiconductor substrate of a first conductivity type having a major surface, a drift region, and a drain region;
b) forming a well region of a second conductivity type in the semiconductor substrate;
c) forming a source region of the first conductivity type in the well region;
d) forming a source contact layer on the source region;
e) forming a gate electrode adjacent to the source region;
f) forming a charge control electrode in the drift region, wherein the charge control electrode is adapted to be biased at a different potential than the gate electrode or the source contact layer, and is adapted to control the electric field in the drift region; and
g) forming a dielectric material around the charge control electrode. - View Dependent Claims (31, 32)
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Specification