Method of operating a memory at high speed using a cycle ready status output signal
First Claim
1. A method of operating a memory at a maximum rate, comprising:
- initiating a memory operation;
identifying a completion of the memory operation;
generating a cycle ready strobe signal upon the identified completion; and
employing the cycle ready strobe signal for initiation of a next memory operation.
1 Assignment
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Accused Products
Abstract
A self-clocking memory device comprises a memory array, a memory input circuit, and a memory control circuit. The memory input circuit is operable to receive an input clock signal and generate a memory operation initiation signal in response thereto, while the memory control circuit is operable to receive the memory operation initiation signal and generate one or more control signals to initiate a memory operation in response thereto. The memory control circuit is further operable to identify completion of the memory operation and generate a cycle ready strobe signal in response thereto. The memory input circuit receives the cycle ready strobe signal as an input and generates a next memory operation initiation signal in response thereto for initiation of a next memory operation.
17 Citations
17 Claims
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1. A method of operating a memory at a maximum rate, comprising:
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initiating a memory operation;
identifying a completion of the memory operation;
generating a cycle ready strobe signal upon the identified completion; and
employing the cycle ready strobe signal for initiation of a next memory operation. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of operating a memory, comprising:
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initiating a first memory operation with an input clock signal associated with a system clock;
generating a cycle ready strobe signal upon a completion of the memory operation; and
using the cycle ready strobe signal to initiate a next memory operation. - View Dependent Claims (12, 13, 14, 15, 16, 17)
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Specification