Multiple output inertial sensing device

• US 20040065151A1
• Filed: 10/06/2003
• Published: 04/08/2004
• Est. Priority Date: 07/31/2001
• Status: Active Grant

• Current Assignee: Michael L. Babala
• Original Assignee: Michael L. Babala
• Inventors: Babala, Michael L.
• Granted Patent: US 6,925,876 B2
• Time in Patent Office: Days
• US Class Current: 73/514.01
• CPC Class Codes: B60R 2021/01325 Vertical acceleration
• CPC Class Codes: B60R 2021/01327 Angular velocity or angular acceleration
• CPC Class Codes: B60R 21/0132 responsive to vehicle motion parameters , e.g. to vehicle longitudinal or transversal deceleration or speed value
• CPC Class Codes: G01C 21/166 Mechanical, construction or arrangement details of inertial navigation systems
• CPC Class Codes: G01P 15/08 with conversion into electric or magnetic values

Abstract

An inertial sensor includes a plurality of sense elements disposed upon a silicon wafer. Each of the sense elements senses a different inertia range. The sense elements are electrically connected to a common signal conditioning circuit that generates an output signal for each of the sense elements. The signal conditioning circuit has an output that is electrically connected to at least one control system and provides output signals in different ranges to the control system.

Claims

1. An inertial sensor adapted to be attached to a body comprising:

a base member;

a single sense element disposed on said base member, said sense element operable to sense a change in a motion parameter of said body; and

a plurality of signal conditioning circuits connected to said single sense element, said signal conditioning circuits adapted to be connected to at least one control system, said signal conditioning circuits operable to generate an electrical signal that is a fiction of said change in a motion parameter of said body.

2. The inertial sensor according to claim 1 wherein said base member is a silicon wafer.

3. The inertial sensor according to claim 2 wherein said signal conditioning circuits are integral with said silicon wafer and said sense elements.

4. The inertial sensor according to claim 2 wherein said signal conditioning circuits are located remotely from said silicon wafer and said sense elements.

5. The inertial sensor according to claim 1 including a device for combining signals connected to said signal conditioning circuits, said device operable to combine the signals generated by said signal conditioning circuits into a single output signal.

6. The inertial sensor according to claim 1 wherein said sense element is an accelerometer.

7. The inertial sensor according to claim 6 wherein one of said signal conditioning circuits is calibrated to sense a first range of acceleration change and a second one of said signal conditioning circuits is calibrated to sense a second range of acceleration change, said second range of acceleration change being different from said first range of acceleration change.

8. The inertial sensor according to claim 1 wherein said sense element is a yaw sensor.

9. The inertial sensor according to claim 8 wherein one of said signal conditioning circuits is calibrated to sense a first range of angular velocity change and a second one of said signal conditioning circuits is calibrated to sense a second range of angular velocity change, said second range of angular velocity change being different from said first range of angular velocity change.