High frequency module

• US 20040065462A1
• Filed: 09/22/2003
• Published: 04/08/2004
• Est. Priority Date: 07/26/1999
• Status: Active Grant

• Current Assignee: Katsuhiko Hayashi
• Original Assignee: Katsuhiko Hayashi
• Inventors: Hayashi, Katsuhiko
• Granted Patent: US 6,906,259 B2
• Time in Patent Office: Days
• US Class Current: 174/52.1
• CPC Class Codes: H01L 21/563 Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
• CPC Class Codes: H01L 2224/05568 the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/73203 Bump and layer connectors
• CPC Class Codes: H01L 2224/73204 the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/73253 Bump and layer connectors
• CPC Class Codes: H01L 2224/83951 Forming additional members, e.g. for reinforcing, fillet sealant
• CPC Class Codes: H01L 23/3672 Foil-like cooling fins or heat sinks being part of lead-frames H01L23/49568
• CPC Class Codes: H01L 23/433 Auxiliary members in containers characterised by their shape, e.g. pistons
• CPC Class Codes: H01L 23/585 comprising conductive layers or plates or strips or rods or rings H01L23/60, H01L23/62, H01L23/64, H01L23/66 take precedence
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 24/31 Structure, shape, material or disposition of the layer connectors after the connecting process
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01031 : Gallium [Ga]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01039 : Yttrium [Y]
• CPC Class Codes: H01L 2924/01058 : Cerium [Ce]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/0132 : Binary Alloys
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/15313 : being a land array, e.g. LGA
• CPC Class Codes: H01L 2924/16152 : Cap comprising a cavity for hosting the device, e.g. U-shaped cap
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19105 : in a side-by-side arrangement on a common die mounting substrate

Abstract

An object of the present invention is to provide a high frequency module which can efficiently radiate heat generated from a semiconductor chip. A high frequency module according to the present invention employs a substrate 11, a semiconductor chip 13 fixed on the substrate 11, a roof plate 15 being contact with an upper surface 13a of the semiconductor chip 13, and a cap, which is contact with an upper surface of the roof plate, having a flat portion 16a and extended portions 16b leaded out below from opposite ends of the flat portion 16a. The extended portions 16b of the cap 16 are contact with side surfaces of the substrate 11. Thus, a wide area contact between the extended portions 16b of the cap 16 and the side surfaces of the substrate 11 can be ensured even if the height of the semiconductor chip 13 fluctuates or the shape of the cap 16 fluctuates. This results that heat generated from the semiconductor chip 13 is efficiently radiated to the substrate 11.

Claims

1. A high frequency module for mounting on a motherboard, comprising:

a substrate, a semiconductor chip fixed on the substrate, and a cap provided above the semiconductor chip, the cap having a flat portion to which heat generated by the semiconductor chip is transferred and extended portions led out from opposite edges of the flat portion, the extended portions of the cap being in contact with side surfaces of the substrate.

2. The high frequency module as claimed in claim 1, wherein the extended portions are connected to electrodes formed on the motherboard.

3. The high frequency module as claimed in claim 1, further comprises a roof plate provided between the semiconductor chip and the flat portion of the cap.

4. The high frequency module as claimed in claim 3, wherein the roof plate is thicker than the flat portion of the cap.

5. The high frequency module as claimed in claim 4, wherein the roof plate contains aluminum.

6. The high frequency module as claimed in claim 1, wherein the semiconductor chip is mounted on the substrate in a flip-chip manner.

7. The high frequency module as claimed in claim 1, further comprises a non reciprocal circuit element mounted on the substrate, a upper surface of the non reciprocal circuit element being in contact with the flat portion of the cap.

8. The high frequency module as claimed in claim 7, wherein a side surface of the non reciprocal circuit element is in contact with the extended portion of the cap.

9. A high frequency module for mounting on a motherboard, comprising:

a substrate, a semiconductor chip fixed on the substrate, a heat sink having a projecting portion in contact with the semiconductor chip, and means for conducting heat transferred to the heat sink to the substrate.

10. The high frequency module as claimed in claim 9, wherein said projecting portion of the heat sink is formed from one end to the other end of the heat sink.

11. The high frequency module as claimed in claim 10, wherein the heat sink is fabricated by extruding aluminum metal.

12. The high frequency module as claimed in claim 9, wherein the heat conducting means is a cap having a flat portion covering the heat sink and extended portions led out from opposite edges of the flat portion.

13. The high frequency module as claimed in claim 12, wherein the extended portion of the cap is in contact with a first side surface of the substrate.

14. The high frequency module as claimed in claim 12, wherein the extended portions of the cap are connected to electrodes formed on the motherboard.

15. The high frequency module as claimed in claim 9, further comprises an electronic component provided in a space formed between the heat sink and the substrate.

16. The high frequency module as claimed in claim 15, wherein the electronic component is thicker than the semiconductor chip.

17. The high frequency module as claimed in claim 13, wherein an upper surface of the non reciprocal circuit element is in contact with the flat portion of the cap.

18. The high frequency module as claimed in claim 17, wherein a first side surface of the non reciprocal circuit element is in contact with a second side surface of the substrate opposite to the first side surface thereof.

19. The high frequency module as claimed in claim 18, wherein the second side surface of the substrate and the first side surface of the non reciprocal circuit element have substantially the same length.

20. The high frequency module as claimed in claim 18, wherein a second side surface of the non reciprocal circuit element opposite to the first side surface thereof is in contact with the extended portion of the cap.

21. The high frequency module as claimed in claim 12, wherein the cap has bent portions led out from other opposite edges of the flat portion.

22. The high frequency module as claimed in claim 21, wherein the bent portion are led out from the flat portion by a shorter distance than the extended portions are led out therefrom.

23. The high frequency module as claimed in claim 22, wherein the bent portions extend to points short of side surfaces of the substrate to leave openings between the ends thereof and the substrate.

24. A high frequency module, comprising:

a high frequency amplifier portion including a substrate having first and second side surfaces, a semiconductor chip mounted on the substrate, and a heat sink provided above the semiconductor chip;

a non reciprocal circuit element having first and second side surfaces; and

a cap having a flat portion, a first extended portion, and a second extended portion,

the high frequency amplifier portion being fixed to the non reciprocal circuit element such that the first side surface of the substrate is contact with the first side surface of the non reciprocal circuit element,

the cap being fixed to the high frequency amplifier portion and the non reciprocal circuit element such that the flat portion of the cap is in contact with at least the heat sink of the high frequency amplifier portion, that the first extended portion of the cap is contact with the second side surface of the substrate, and that that the second extended portion of the cap is contact with the second side surface of the non reciprocal circuit element.

25. The high frequency module as claimed in claim 24, wherein the first side surface of the substrate and the first side surface of the non reciprocal circuit element have substantially the same length.

26. The high frequency module as claimed in claim 25, wherein the first side surface of the non reciprocal circuit element is longer than a distance between the first side surface and the second side surface of the non reciprocal circuit element.

27. The high frequency module as claimed in claim 24, wherein the first extended portion of the cap is electrically connected to a motherboard on which the high frequency module is mounted.

28. The high frequency module as claimed in claim 24, wherein the non reciprocal circuit element further has an upper surface, the flat portion of the cap being in contact with the upper surface of the non reciprocal circuit element.