Semiconductor device and process for production thereof
First Claim
1. A semiconductor device comprising:
- a pixel portion including a plurality of pixels, each of the pixels including a pixel TFT and a storage capacitance;
said pixel TFT comprising;
a light blocking film;
an insulating film including at least a first insulating layer and a second insulating layer;
an active film being formed over the light blocking film with the insulating film interposed therebetween;
said storage capacitance comprising;
an electrode being formed in a same layer as the light blocking film;
an dielectric material;
a semiconductor film having a same material as a drain region of the pixel TFT, wherein the dielectric material is formed of a portion of the insulating film.
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Accused Products
Abstract
Disclosed herein is a semiconductor device with high reliability which has TFT of adequate structure arranged according to the circuit performance required. The semiconductor has the driving circuit and the pixel portion on the same substrate. It is characterized in that the storage capacitance is formed between the first electrode formed on the same layer as the light blocking film and the second electrode formed from a semiconductor film of the same composition as the drain region, and the first base insulating film is removed at the part of the storage capacitance so that the second base insulating film is used as the dielectric of the storage capacitance. This structure provides a large storage capacitance in a small area.
75 Citations
23 Claims
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1. A semiconductor device comprising:
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a pixel portion including a plurality of pixels, each of the pixels including a pixel TFT and a storage capacitance;
said pixel TFT comprising;
a light blocking film;
an insulating film including at least a first insulating layer and a second insulating layer;
an active film being formed over the light blocking film with the insulating film interposed therebetween;
said storage capacitance comprising;
an electrode being formed in a same layer as the light blocking film;
an dielectric material;
a semiconductor film having a same material as a drain region of the pixel TFT, wherein the dielectric material is formed of a portion of the insulating film. - View Dependent Claims (5, 6, 7, 8)
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2. A semiconductor device comprising:
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a pixel portion having a plurality of pixels, each of the pixels including a pixel TFT and a storage capacitance;
said pixel TFT comprising;
a light blocking film;
an insulating film including at least a first insulating layer and a second insulating layer;
an active film being formed over the light blocking film with the insulating film interposed therebetween;
said storage capacitance comprising;
an electrode being formed in a same layer as the light blocking film;
an dielectric material;
a semiconductor film having a same material as a drain region of the pixel TFT, wherein the dielectric material is formed of a portion of the insulating film while the other portion of the insulating film is removed. - View Dependent Claims (16, 17, 18, 19)
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3. A semiconductor device comprising:
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a pixel portion having a plurality of pixels, each of the plurality of pixels including a pixel TFT and a storage capacitance;
said pixel TFT comprising;
a light blocking film;
a first insulating film being in contact with the light blocking film;
a second insulating film;
an active film being formed over the light blocking film with the second insulating film interposed therebetween;
wherein the second insulating film is in contact with the active layer;
said storage capacitance comprising;
an electrode being formed in a same layer as the light blocking film;
the second insulating film;
a semiconductor film having a same material as a drain region of the pixel TFT. - View Dependent Claims (4, 20, 21, 22, 23)
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9. A method for producing a semiconductor device including a plurality of pixels, each of the plurality of pixels including a pixel TFT and a storage capacitance,
said method comprising the steps of: -
forming a light blocking film over a substrate;
forming an electrode from a same material as the light blocking film over the substrate;
forming a first insulating film covering the light blocking film and the electrode;
etching the first insulating film to form an opening on the electrode;
forming a second insulating film covering the first insulating film and the opening; and
forming a semiconductor film on the second insulating film.
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10. A method for producing a semiconductor device including a driving circuit portion and a pixel portion,
said pixel portion having a plurality of pixels, each of the plurality of pixels including a pixel TFT and a storage capacitance, said method comprising the steps of: -
forming a light blocking film over a substrate;
forming an electrode from a same material as the light blocking film over the substrate;
forming a first insulating film that covering the light blocking film and the electrode;
etching the first insulating film to form an opening on the electrode;
forming a second insulating film covering the first insulating film and the opening;
forming a semiconductor film on the second insulating film;
forming a gate insulating film covering the semiconductor film;
etching a portion of the gate insulating film to expose a semiconductor film of the driving circuit portion and a portion of a semiconductor film of the pixel portion;
thermally oxidizing to form a thermal oxide film on a surface of the exposed semiconductor film of the driving portion and the exposed portion of the semiconductor film of the pixel portion. - View Dependent Claims (12, 13)
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11. A method for producing a semiconductor device including a driving circuit portion and a pixel portion,
said pixel portion having a plurality of pixels, each of the plurality of pixels including a pixel TFT and a storage capacitance, said method comprising the steps of: -
forming a light blocking film over a substrate;
forming an electrode from a same material as the light blocking film over the substrate;
forming a first insulating film covering the light blocking film and the electrode;
etching the first insulating film to form an opening on the electrode;
forming a second insulating film covering the first insulating film and the opening;
forming a semiconductor film on the second insulating film;
forming a gate insulating film covering the semiconductor film;
etching a portion of said gate insulating film to expose a semiconductor film of the driving circuit portion and a portion of a semiconductor film of the pixel portion;
thermally oxidizing to form a thermal oxide film on a surface of the exposed semiconductor film of the driving circuit portion and the exposed portion of the semiconductor of the pixel portion;
forming at least a first LDD region in the semiconductor film of the driving circuit portion and at least a second LDD region in the semiconductor film of the pixel portion, wherein the first LDD region in the driving circuit portion has a different length from the second LDD region in the pixel portion. - View Dependent Claims (14, 15)
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Specification