Short channel trench mosfet with reduced gate charge
First Claim
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1. A MOSgated semiconductor device comprising:
- a channel receiving region of a first conductivity type;
a channel region of a second conductivity type formed in said channel receiving region;
a plurality of spaced trenches formed in said channel receiving region;
a first region of a first conductivity type formed at the bottom of each trench, each said first region of said first conductivity type being adjacent to said channel receiving region and of a higher conductivity than said channel receiving region;
a plurality of conductive regions of said first conductivity type each disposed adjacent a trench; and
a contact layer formed over said channel receiving region and in ohmic contact with said plurality of contact regions.
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Abstract
A trench-type MOSgated device including high conductivity regions formed at the bottom of its trenches and field relief regions at or below the bottom of its channel region.
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Citations
20 Claims
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1. A MOSgated semiconductor device comprising:
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a channel receiving region of a first conductivity type;
a channel region of a second conductivity type formed in said channel receiving region;
a plurality of spaced trenches formed in said channel receiving region;
a first region of a first conductivity type formed at the bottom of each trench, each said first region of said first conductivity type being adjacent to said channel receiving region and of a higher conductivity than said channel receiving region;
a plurality of conductive regions of said first conductivity type each disposed adjacent a trench; and
a contact layer formed over said channel receiving region and in ohmic contact with said plurality of contact regions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 19)
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10. A MOSgated semiconductor device comprising:
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a semiconductor die having an epitaxial layer of a first conductivity type formed over a substrate;
a channel region of a second conductivity type formed in said epitaxial layer;
a plurality of spaced trenches formed in said epitaxial layer;
a first region of a first conductivity type formed at the bottom of each trench, each said first region of said first conductivity type being adjacent to said epitaxial layer and of a higher conductivity than said epitaxial layer;
a plurality of source regions of said first conductivity type each disposed adjacent a trench; and
a source contact formed over said epitaxial layer and in ohmic contact with said plurality of contact regions. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 20)
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Specification