RF semiconductor devices and methods for fabricating the same

• US 20040067610A1
• Filed: 07/25/2003
• Published: 04/08/2004
• Est. Priority Date: 07/26/2002
• Status: Active Grant

• Current Assignee: Tessera Advanced Technologies Inc (Adeia Inc.)
• Original Assignee: Dongbu HiTek Co., Ltd. (DB HiTek Co., Ltd.)
• Inventors: Lee, Yong Guen
• Granted Patent: US 7,361,583 B2
• Time in Patent Office: Days
• US Class Current: 438/197
• CPC Class Codes: H01L 21/28123 Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
• CPC Class Codes: H01L 21/823437 with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
• CPC Class Codes: H01L 21/823481 isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
• CPC Class Codes: H01L 29/4238 characterised by the surface lay-out
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

RF semiconductor devices and methods of making the same are disclosed. In a disclosed method, a trench for defining an active region and an element isolation region is formed in a semiconductor substrate. One or more gate lines is then formed within the active region. Next, an insulating layer is formed on the semiconductor substrate and the gate lines. Contact holes are then formed in the insulating layer. Contact plugs are then formed in the contact holes. Thereafter, a conductive pattern is electrically connected with the contact plugs.

Claims

1. A method for fabricating an RF semiconductor device comprising:

forming a trench to define an active region and an element isolation region in a semiconductor substrate;

forming at least one gate line within the active region of the semiconductor substrate, the at least one gate line not extending over a center of the trench;

forming an insulating layer on the at least one gate line and the semiconductor substrate;

forming a contact hole in the insulating layer;

forming a contact plug in the contact hole; and

forming a conductive pattern layer electrically connected with the contact plug.

2. A method as defined in claim 1, wherein the at least one gate line comprises at least two gate lines, and the at least two gate lines are not connected with each other in the element isolation region

3. A method as defined in claim 2 wherein at least two of the at least two gate lines are connected in the active region.

4. A method as defined in claim 1, wherein a thickness of the insulating layer is about 1000 to about 20000 angstroms.

5. A method as defined in claim 1, wherein a thickness of the conductive pattern layer is above 10000 angstroms.

6. A method as defined in claim 1, wherein the insulating layer is one of a low temperature oxide and a polyimide.

7. A method as defined in claim 1, wherein the at least one gate line is formed in order to minimize parasitic capacitance between the at least one gate line and the substrate.

8. A method as defined in claim 1, wherein the at least one gate line is formed in order to minimize resistance of the at least one gate line.

9. A method as defined in claim 1, furthur comprising metal contacts linking at least two of the at least one gate lines.

10. A method as defined in claim 1, wherein the at least one gate line does not extend along a longitudinal axis of the trench.

11. An RF semiconductor device comprising:

a substrate having an active region and an isolation region; and

a plurality of gate lines formed in the active region but not in the isolation region of the substrate.

12. A semiconductor device as defined in claim 11 further comprising:

a trench formed in the substrate, wherein at least one of the gate lines does not extend over a center of the trench.