Method and apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces

• US 20040069329A1
• Filed: 09/30/2002
• Published: 04/15/2004
• Est. Priority Date: 06/30/2000
• Status: Active Grant

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Woods, Carl, Ravkin, Mike, de Larios, John M., Redeker, Fritz, Garcia, James P.
• Granted Patent: US 7,234,477 B2
• Time in Patent Office: Days
• US Class Current: 134/95.2
• CPC Class Codes: B08B 3/04 Cleaning involving contact with liquid
• CPC Class Codes: G03F 7/30 Imagewise removal using liquid means
• CPC Class Codes: H01L 21/67028 for cleaning followed by drying, rinsing, stripping, blasting or the like
• CPC Class Codes: H01L 21/67034 for drying
• CPC Class Codes: H01L 21/67051 using mainly spraying means, e.g. nozzles
• CPC Class Codes: Y10S 134/902 Semiconductor wafer

Abstract

One of many embodiments of a substrate preparation system is provided which includes a head having a head surface where the head surface is proximate to a surface of the substrate. The system also includes a first conduit for delivering a first fluid to the surface of the substrate through the head, and a second conduit for delivering a second fluid to the surface of the substrate through the head, where the second fluid is different than the first fluid. The system also includes a third conduit for removing each of the first fluid and the second fluid from the surface of the substrate where the first conduit, the second conduit and the third conduit act substantially simultaneously.

Claims

1. A substrate preparation system, comprising:

a head having a head surface, the head surface configured to be proximate to a surface of the substrate when in operation;

a first conduit for delivering a first fluid to the surface of the substrate through the head;

a second conduit for delivering a second fluid to the surface of the substrate through the head, the second fluid being different than the first fluid; and

a third conduit for removing each of the first fluid and the second fluid from the surface of the substrate, the first conduit, the second conduit and the third conduit configured to act substantially simultaneously when in operation.

2. A substrate preparation system as recited in claim 1, wherein the substrate moves so that the head traverses the surface of the substrate.

3. A substrate preparation system as recited in claim 1, wherein the head moves to traverses the surface of the substrate.

4. A substrate preparation system as recited in claim 1, wherein the head defines an area that is less than an area of the surface of the substrate.

5. A substrate preparation system as recited in claim 1, wherein the head extends in size up to a diameter of the substrate.

6. A substrate preparation system as recited in claim 1, wherein the head has a length that is larger than a diameter of the substrate.

7. A substrate preparation system as recited in claim 1, wherein the substrate is in a horizontal orientation when being prepared.

8. A substrate preparation system as recited in claim 1, wherein the substrate is in a vertical orientation when being prepared.

9. A substrate preparation system as recited in claim 1, wherein the head has a plurality of the first conduit, a plurality of the second conduit, and a plurality of the third conduit.

10. A substrate preparation system as recited in claim 6, wherein the head is a bar having a length that is greater than a width.

11. A substrate preparation system as recited in claim 6, wherein the head scans over the surface of the substrate when operating with first conduit, the second conduit, and the third conduit.

12. A substrate preparation system as recited in claim 1, wherein the substrate rotates as the head operates with the first conduit, the second conduit, and the third conduit.

13. A substrate preparation system as recited in claim 1, wherein the substrate is stationary and the head scans over an entire surface of the substrate.

14. A substrate preparation system as recited in claim 1, wherein a second head is positioned on an opposite side of the head and made to be proximate to an undersurface of the substrate when in operation.

15. A substrate preparation system as recited in claim 14, wherein the first and second head move synchronously to traverse over the surface of the substrate and the underside of the substrate.

16. A substrate preparation system as recited in claim 1, wherein the first fluid is one of deionized water (DIW) and a cleaning fluid.

17. A substrate preparation system as recited in claim 1, wherein the second fluid is one of isopropyl alcohol (IPA) vapor, nitrogen, organic compounds, hexanol, ethylglycol, and compounds miscible with water.

18. A substrate preparation system as recited in claim 1, wherein the third conduit couples to a vacuum.

19. A substrate preparation system as recited in claim 1, further comprising:

a fourth conduit for delivering a third fluid to the surface of the substrate through the head, the third fluid being different than the first fluid and the second fluid.

20. A substrate preparation system as recited in claim 1, wherein the third fluid is a cleaning solution.

21. A method for processing substrate, comprising:

applying a first fluid onto a surface of a substrate;

applying a second fluid onto the surface of the substrate, the second fluid being applied in close proximity to the application of the first fluid; and

removing the first fluid and the second fluid from the surface of the substrate, the removing being processed just as first fluid and the second fluid are applied to the surface of the substrate;

wherein the applying and the removing forming a controlled meniscus.

22. A method for processing substrate as recited in claim 21, further comprising:

scanning the controlled meniscus over the surface of the substrate.

23. A method for processing substrate as recited in claim 21, wherein the first fluid is one of DIW and a cleaning fluid.

24. A method for processing substrate as recited in claim 21, wherein the first fluid is one of isopropyl alcohol (IPA) vapor, nitrogen, organic compounds, hexanol, ethylglycol, and compounds miscible with water.

25. A method for processing substrate as recited in claim 21, wherein the removing the first fluid and the second fluid includes applying a vacuum in close proximity to the surface of the substrate.

26. A method for processing substrate as recited in claim 21, wherein the surface is a low-k dielectric.

27. A method for processing substrate as recited in claim 21, wherein the meniscus extends up to a diameter of the substrate.

28. A method for processing substrate as recited in claim 21, wherein the meniscus extends beyond a diameter of the substrate.

29. A method for processing substrate as recited in claim 21, wherein the applying the first fluid includes adjusting a flow of the first fluid to form the stable meniscus.

30. A method for processing substrate as recited in claim 21, wherein the applying the second fluid includes adjusting a flow of the second fluid to form the stable meniscus.

31. A method for processing substrate as recited in claim 25, wherein applying the vacuum includes adjusting a magnitude of the vacuum to form the stable meniscus.

32. A method for processing substrate as recited in claim 25, wherein the controlled meniscus is stable and removes a fluid film from the surface of the substrate.

33. A method for processing substrate as recited in claim 21, wherein the meniscus is controlled when the meniscus is moved off of the substrate.

34. A substrate preparation apparatus to be used in substrate processing operations, comprising:

a proximity head being configured to move toward a substrate surface, the proximity head including,

at least one of a first source inlet, the first source inlet being configured to apply a first fluid towards the substrate surface when the proximity head is in a position that is close to the substrate surface,

at least one of a second source inlet, the second source inlet being configured to apply a second fluid towards the substrate surface when the proximity head is in the position that is close to the substrate surface, and

at least one of a source outlet, the source outlet being configured to apply a vacuum pressure to remove the first fluid, the second fluid from the substrate surface when the proximity head is in the position that is close to the substrate surface.

35. A substrate preparation apparatus as recited in claim 34, wherein the first inlet is configured to introduce an isopropyl alcohol (IPA) vapor toward the substrate.

36. A substrate preparation apparatus as recited in claim 34, wherein the second inlet is configured to introduce deionized water (DIW) toward the substrate.

37. A substrate preparation apparatus as recited in claim 34, wherein the proximity head is configured to produce a meniscus on the substrate when the proximity head is moved in close proximity to the substrate.

38. A substrate preparation apparatus as recited in claim 34, further comprising:

a proximity head carrier assembly configured to move the proximity head in a linear movement along a radius of the substrate.

39. A substrate preparation apparatus as recited in claim 38, wherein the proximity head carrier includes an upper arm and a lower arm.

40. A substrate preparation apparatus as recited in claim 39, wherein the proximity head is attached to the upper arm and a second proximity head is attached to the lower arm.

41. A substrate preparation apparatus as recited in claim 34, wherein the proximity head extends over at least a diameter of the substrate.

42. A substrate preparation apparatus to be used in substrate processing operations, comprising:

a proximity head carrier assembly configured to travel in a linear movement along a radius of a substrate, the proximity head carrier assembly including,

a first proximity head being disposed over a substrate;

a second proximity head being disposed under the substrate;

an upper arm connected with the first proximity head, the upper arm being configured so the first proximity head is movable into close proximity over the substrate to initiate substrate preparation; and

a lower arm connected with the second proximity head, the lower arm being configured so the second proximity head is movable into close proximity under the substrate to initiate substrate preparation.

43. A substrate preparation apparatus as recited in claim 42, each of the first proximity head and the second proximity head including,

at least one of a first source inlet, the first source inlet being configured to apply a first fluid towards a substrate surface,

at least one of a second source inlet, the second source inlet being configured to apply a second fluid towards the substrate surface,

at least one of a source outlet, the source outlet being configured to apply a vacuum pressure toward the substrate surface to remove the first fluid and the second fluid from the substrate surface.

44. A substrate preparation apparatus as recited in claim 42, wherein the upper arm is configured to move the first proximity head toward a first wafer surface and the lower arm is configured to move the second proximity head toward a second wafer surface to complete one of a cleaning and a drying operation.

45. A substrate preparation apparatus as recited in claim 42, wherein the first source inlet is configured to introduce an isopropyl alcohol (IPA) vapor towards the wafer.

46. A substrate preparation apparatus as recited in claim 42, wherein the second source inlet is configured to introduce deionized water (DIW) towards the wafer.

47. A substrate preparation apparatus as recited in claim 42, wherein the first proximity head is configured to produce a first meniscus on a first wafer surface and the second proximity head is configured to produce a second meniscus on a second wafer surface when the first proximity head and the second proximity head are moved in close proximity to the wafer.

48. A substrate preparation apparatus as recited in claim 42, wherein the first proximity head and the second proximity head extends at least a diameter of the wafer.

49. A substrate preparation apparatus as recited in claim 42, wherein the proximity head carrier assembly is configured to move the first proximity head and the second proximity head from a first edge of the wafer to a second edge of the wafer by moving along the diameter of the wafer, the first edge and the second edge being diametrically opposite to one another.