Sputtering targets and method for the preparation thereof

• US 20040069623A1
• Filed: 04/17/2003
• Published: 04/15/2004
• Est. Priority Date: 01/05/1996
• Status: Abandoned Application

• Current Assignee: Rotar Incorporated
• Original Assignee: Rotar Incorporated
• Inventors: Vanderstraeten, Johan Emile Marie
• Application Number:
  US10/417,413
• Publication Number:
  US 20040069623A1
• Time in Patent Office: Days
• US Class Current: 204/298.13
• CPC Class Codes: C03C 17/2456 Coating containing TiO2
• CPC Class Codes: C03C 2217/212 TiO2
• CPC Class Codes: C03C 2218/154 by sputtering
• CPC Class Codes: C23C 14/3414 Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
• CPC Class Codes: C23C 4/11 Oxides
• CPC Class Codes: C23C 4/134 Plasma spraying

Abstract

A process for the preparation of a sputtering target which comprises sub-stoichiometric titanium dioxide, TiO_x, where x is below 2, having an electrical resistivity of less than 0.5 ohm.cm, optionally together with niobium oxide, which process comprises plasma spraying titanium dioxide, TiO₂, optionally together with niobium oxide, onto a target base in an atmosphere which is oxygen deficient and which does not contain oxygen-containing compounds, the target vase being coated with TiO_x which is solidified by cooling under conditions which prevent the sub-stiochiometric titanium dioxide from combining with oxygen.

Claims

1. A process for the preparation of a sputtering target which comprises sub-stoichiometric titanium dioxide, TiO_x, where x is below 2 having an electrical resistivity of less than 0.5 ohm.cm, optionally together with niobium oxide, which process comprises plasma spraying titanium dioxide, TiO₂, optionally together with niobium oxide, onto a target base in an atmosphere which is oxygen deficient and which does not contain oxygen-containing compounds, the target base being coated with TiO_x which is solidified by cooling under conditions which prevent the sub-stoichiometric titanium dioxide from combining with oxygen.

2. A process as claimed in claim 1 wherein the target base is water cooled during the plasma spraying.

3. A process as claimed in claim 1 or claim 2 wherein the plasma spraying is carried out using argon as the plasma gas and hydrogen as the secondary plasma gas.

4. A process as claimed in any one of the preceding claims wherein the target base is titanium, stainless steel, aluminium or copper.

5. A process as claimed in claim 4 wherein the target base is a rotatable target or a flat magnetron target.

6. A process as claimed in any one of the preceding claims wherein the titanium dioxide which is plasma sprayed has particle size in the range of from 1 to 60 micrometres.

7. A process as claimed in any one of the preceding claims wherein the titanium dioxide is plasma sprayed together with Nb₂O₃.

8. A process as claimed in any one of the preceding claims wherein the sub-stoichiometric titanium dioxide, TiO_x(has a value of x in the range of from 1.55 to 1.95.

9. A process as claimed in any one of the preceding claims wherein the sputtering target has an electrical resistivity of about 0.02 ohm.cm.

10. A sputtering target comprising sub-stoichiometric titanium dioxide whenever prepared by a process as claimed in any one of the preceding claims.

11. A sputtering target as claimed in claim 10 which has an electrical resistivity of about 0.02 ohm.cm.

12. A process for the preparation of sub-stoichiometric titanium dioxide, TiO_x, where x is below 2 having an electrical resistivity of less than 0.1 ohm.cm which process comprises subjecting titanium dioxide to a plasma treatment in an atmosphere which is oxygen deficient and which does not contain any oxygen-containing compounds.

13. A process as claimed in claim 12 wherein the titanium dioxide is sprayed through a plasma flame having a temperature of above 2000°

C.

14. A process as claimed in claim 13 wherein the plasma flame uses a mixture of hydrogen and argon as the plasma gas.