Thin film transistor with metal oxide layer and method of making same
First Claim
1. A thin film transistor, comprising:
- an insulating substrate;
an active layer located over the substrate;
a gate electrode located over the substrate; and
a charge storage region located between the active-layer and the gate electrode, wherein;
the charge storage region comprises a tunneling dielectric located adjacent to the active layer, a blocking dielectric located adjacent to the gate electrode and a charge storage dielectric located between the tunneling dielectric and the blocking dielectric; and
at least one of the tunneling dielectric, the charge storage dielectric and the blocking dielectric comprises a layer having a dielectric constant greater than 3.9.
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Abstract
A thin film transistor includes an insulating substrate, an active layer located over the substrate, a gate electrode located over the substrate; and a charge storage region located between the active layer and the gate electrode. The charge storage region includes a tunneling dielectric located adjacent to the active layer, a blocking dielectric located adjacent to the gate electrode and a charge storage dielectric located between the tunneling dielectric and the blocking dielectric. At least one of the tunneling dielectric, the charge storage dielectric and the blocking dielectric comprises a layer having a dielectric constant greater than 3.9, such as a metal oxide layer.
71 Citations
38 Claims
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1. A thin film transistor, comprising:
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an insulating substrate;
an active layer located over the substrate;
a gate electrode located over the substrate; and
a charge storage region located between the active-layer and the gate electrode, wherein;
the charge storage region comprises a tunneling dielectric located adjacent to the active layer, a blocking dielectric located adjacent to the gate electrode and a charge storage dielectric located between the tunneling dielectric and the blocking dielectric; and
at least one of the tunneling dielectric, the charge storage dielectric and the blocking dielectric comprises a layer having a dielectric constant greater than 3.9. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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25. An inverted thin film transistor, comprising:
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an insulating substrate;
a gate electrode located over the insulating substrate;
an active layer located over the gate electrode; and
a charge storage region located between the active layer and the gate electrode, wherein;
the charge storage region comprises a tunneling dielectric located adjacent to the active layer, a blocking dielectric located adjacent to the gate electrode and a charge storage dielectric located between the tunneling dielectric and the blocking dielectric; and
at least one of the tunneling dielectric, the charge storage dielectric and the blocking dielectric comprises a layer having a dielectric constant greater than 3.9. - View Dependent Claims (26, 27, 28)
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29. A monolithic three dimensional array, comprising:
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a substrate; and
a plurality of device levels comprising a plurality of thin film transistors with charge storage regions;
wherein at least one of a tunneling dielectric, a charge storage dielectric and a blocking dielectric in the charge storage regions comprises a metal oxide layer. - View Dependent Claims (30, 31, 32, 33)
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34. A thin film transistor, comprising:
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an insulating substrate;
an active layer located over the substrate;
a control gate electrode located over the substrate; and
a charge storage region located between the active layer and the control gate electrode, wherein the charge storage region comprises a metal oxide tunneling dielectric located adjacent to the active layer, a blocking dielectric located adjacent to the control gate electrode and a floating gate located between the tunneling dielectric and the blocking dielectric. - View Dependent Claims (35, 36, 37, 38)
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Specification