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Thin film transistor with metal oxide layer and method of making same

  • US 20040069990A1
  • Filed: 10/15/2002
  • Published: 04/15/2004
  • Est. Priority Date: 10/15/2002
  • Status: Active Grant
First Claim
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1. A thin film transistor, comprising:

  • an insulating substrate;

    an active layer located over the substrate;

    a gate electrode located over the substrate; and

    a charge storage region located between the active-layer and the gate electrode, wherein;

    the charge storage region comprises a tunneling dielectric located adjacent to the active layer, a blocking dielectric located adjacent to the gate electrode and a charge storage dielectric located between the tunneling dielectric and the blocking dielectric; and

    at least one of the tunneling dielectric, the charge storage dielectric and the blocking dielectric comprises a layer having a dielectric constant greater than 3.9.

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