Electro-optical device having storage capacito laminated between TFT and data line

• US 20040070708A1
• Filed: 10/08/2003
• Published: 04/15/2004
• Est. Priority Date: 04/21/2000
• Status: Active Grant

• Current Assignee: 138 East LCD Advancements Limited (Vector Capital Corporation)
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Kurashina, Hisaki
• Granted Patent: US 6,825,891 B2
• Time in Patent Office: Days
• US Class Current: 349/110
• CPC Class Codes: G02F 1/1345 Conductors connecting electrodes to cell terminals
• CPC Class Codes: G02F 1/136209 Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: G09G 2300/0426 Layout of electrodes and connections
• CPC Class Codes: G09G 2300/0842 forming a memory circuit, e.g. a dynamic memory with one capacitor
• CPC Class Codes: G09G 2320/0214 with crosstalk due to leakage current of pixel switch in active matrix panels
• CPC Class Codes: G09G 2320/0233 Improving the luminance or brightness uniformity across the screen
• CPC Class Codes: G09G 3/3225 using an active matrix

Abstract

The present invention provides electro-optical device that can include, on a TFT array substrate, pixel electrodes, TFTs for switching the respective pixel electrodes, and scanning lines and data lines respectively connected to the TFTs. By laminating a capacitive electrode and a capacitive line with an interlayer insulator interposed therebetween, a storage capacitor can be formed in a region overlapping the scanning line in a plan view. This arrangement increases a pixel aperture ratio and the capacitance of the storage capacitor, thereby reducing cross-talk and ghost and presenting a high-quality image display.

Claims

1. An electro-optical device, comprising, above a substrate:

scanning lines and data lines that intersect with each other to form a grid-like pattern;

thin-film transistors, each of the thin-film transistors being disposed in correspondence with intersections of one of the scanning lines and one of the data lines;

pixel electrodes respectively being disposed in correspondence with the thin-film transistors;

a first light shielding film laminated between the data line and the pixel electrode; and

a storage capacitor including the first light shielding film, laminated between the data line and the pixel electrode.

2. The electro-optical device according to claim 1, the thin-film transistor having a channel region which is formed in an intersection portion of the scanning line and the data line.

3. The electro-optical device according to claim 1, the storage capacitor comprising the first light shielding film and a capacitive electrode of pixel-electrode potential.

4. The electro-optical device according to claim 3, the capacitive electrode being electrically connected to a semiconductor layer of the thin film transistor via a barrier layer forming a film of the data line.

5. The electro-optical device according to claim 4, the barrier layer being formed along the data line and the scanning line.

6. The electro-optical device according to claim 1, the first light shielding film being formed along the data line and the scanning line.

7. The electro-optical device according to claim 6, the first light shielding film being formed in a grid configuration.

8. An electronic apparatus comprising an electro-optical device according to claim 1.