Thin film thickness measuring method and apparatus, and mehtod and apparatus for manufacturing a thin film device using the same

• US 20040070773A1
• Filed: 11/13/2003
• Published: 04/15/2004
• Est. Priority Date: 04/21/1998
• Status: Active Grant

• Current Assignee: Hirofumi Tsuchiyama, Minori Noguchi, Shunji Maeda, Takanori Minomiya, Takenori Hirose, Yukio Kenbo
• Original Assignee: Hirofumi Tsuchiyama, Minori Noguchi, Shunji Maeda, Takanori Minomiya, Takenori Hirose, Yukio Kenbo
• Inventors: Tsuchiyama, Hirofumi, Minomiya, Takanori, Maeda, Shunji, Noguchi, Minori, Hirose, Takenori, Kenbo, Yukio
• Granted Patent: US 6,806,970 B2
• Time in Patent Office: Days
• US Class Current: 356/630
• CPC Class Codes: G01B 11/0625 with measurement of absorption or reflection

Abstract

This invention aims to measure film thickness and film thickness distribution to high precision in a wide range of transparent films. As one example, in a CMP process, the film thickness of an outermost surface layer formed on a step pattern of an actual product can be measured so that high precision film thickness control can be performed. To achieve an increase of processing throughput, the film thickness of an optically transparent film formed on an actual device pattern is controlled to high precision by incorporating a film thickness measuring unit, which performs frequency analysis of a spectral distribution, in a polishing apparatus. As a result, an increase of processing throughput is realized. To perform the high precision measurement, the frequency analysis is performed on the spectral distribution waveform of interference light from white light due to the film, and an absolute value of film thickness is computed from the relation of the phase of frequency components in the waveform and film thickness.

Claims

1. A method of measuring thickness of a film formed on a specimen, comprising the steps of:

placing a predetermined point of said specimen at a measuring position;

illuminating said predetermined point with light;

detecting light reflected from said predetermined point by the illumination;

determining from the detected light whether or not a thickness measurement of said film formed on said predetermined point is possible;

measuring the thickness of said film formed on said predetermined point of said specimen, when the thickness measurement is determined possible;

measuring a thickness of said film formed on a position around said predetermined point when the thickness measurement is determined impossible; and

outputting information of thickness distribution of said film formed on said specimen,

wherein said position around said predetermined point is measured using information of a spectral distribution waveform of the reflected light from several points in the vicinity of said predetermined point.

2. A method according to claim 1, wherein said specimen is a semiconductor wafer on which a plurality of chips are formed and said predetermined point is inside one of said plurality of chips.

3. A method according to claim 1, wherein a possibility of the thickness measurement of said film is determined from characteristics of a spectral distribution waveform of the reflected light from said predetermined point.

4. A method according to claim 3, wherein said characteristics of a spectral distribution waveform includes at least one of a value of a specific peak of said spectral distribution waveform, spectrum analyzed data of said spectral distribution waveform, a position or magnitude of a specific frequency range of said spectral distribution waveform and a surface area factor in a visual field.

5. A method of measuring thickness of a film formed on a specimen, comprising the steps of:

illuminating a measuring point on a specimen on which a pattern is formed and is covered with a film with light;

detecting light reflected from a surface of film formed on said specimen and light reflected from a surface of said pattern covered with said film;

determining from a spectral distribution waveform of the reflected light whether or not a thickness measurement of said film formed on said measuring point is possible;

searching for another measuring point by detecting light reflected from a point around said measuring point when said measuring point is determined impossible during the thickness measurement of said film;

measuring a thickness of said film formed on said another measuring point; and

outputting information of a thickness distribution of said film on said specimen.

6. A method according to claim 5, wherein said specimen is a semiconductor wafer on which a plurality of chips are formed and said predetermined point is inside one of said plurality of chips.

7. A method according to claim 5, wherein a possibility of the thickness measurement of said film is determined from characteristics of a spectral distribution waveform of the reflected light from said predetermined point.

8. A method according to claim 7, wherein said characteristics of a spectral distribution waveform includes at least one of a value of a specific peak of said waveform, spectrum analyzed data of said waveform, a position or magnitude of a specific frequency range of said waveform and a surface area factor in a visual field.

9. A method according to claim 5, wherein the thickness of said film is measured by calculating based on a frequency and a phase of a spectral distribution waveform of the reflected light.

10. A method according to claim 5, wherein the thickness of said film is measured by fitting a spectral distribution waveform derived from a structural model of said film and said pattern to a spectral distribution waveform of the reflected light.