Method for manufacturing semiconductor device

• US 20040072411A1
• Filed: 12/27/2002
• Published: 04/15/2004
• Est. Priority Date: 12/28/2001
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Isobe, Atsuo, Shibata, Hiroshi, Shiga, Aiko, Yamazaki, Shunpei, Azami, Munehiro, Kokubo, Chiho
• Granted Patent: US 6,911,358 B2
• Time in Patent Office: Days
• US Class Current: 438/482
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02422 Non-crystalline insulating materials, e.g. glass, polymers
• CPC Class Codes: H01L 21/02425 Conductive materials, e.g. metallic silicides
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/02496 Layer structure
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02609 Crystal orientation
• CPC Class Codes: H01L 21/02672 using crystallisation enhancing elements
• CPC Class Codes: H01L 21/02678 Beam shaping, e.g. using a mask
• CPC Class Codes: H01L 21/02683 Continuous wave laser beam
• CPC Class Codes: H01L 21/02686 Pulsed laser beam
• CPC Class Codes: H01L 21/02691 Scanning of a beam
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1281 by using structural features to control crystal growth, e.g. placement of grain filters
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 29/42384 for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
• CPC Class Codes: H01L 29/78603 : characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 29/78621 : with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/78675 : with normal-type structure, e.g. with top gate

Abstract

A method for manufacturing a semiconductor device having steps of forming an amorphous semiconductor on a substrate having an insulating surface; patterning the amorphous semiconductor to form plural first island-like semiconductors; irradiating a linearly condensed laser beam on the plural first island-like semiconductors while relatively scanning the substrate, thus crystallizing the plural first island-like semiconductors; patterning the plural first island-like semiconductors that have been crystallized into to form plural second island-like semiconductors; forming plural transistors using the plural second island-like semiconductors; and forming a unit circuit using a predetermined number of the transistors, where the second island-like semiconductors used for the predetermined number of the transistors are formed from the first island-like semiconductors that are different from each other.

Claims

1. A method for manufacturing a semiconductor device comprising:

forming an amorphous semiconductor on a substrate having an insulating surface;

patterning said amorphous semiconductor into a desired shape to form plural first island-like semiconductors;

irradiating a linearly condensed laser beam on said plural first island-like semiconductors while relatively scanning said substrate, thus crystallizing said plural first island-like semiconductors;

patterning said plural first island-like semiconductors that have been crystallized into a desired shape to form plural second island-like semiconductors;

forming plural transistors using said plural second island-like semiconductors; and

forming a unit circuit using a predetermined number of said transistors, of said plural transistors;

wherein said second island-like semiconductors used for said predetermined number of said transistors are formed from said first island-like semiconductors that are different from each other.

3. The method for manufacturing a semiconductor device as claimed in claim 1 or 2, wherein said plural transistors are arranged so that all the directions of migration of electric charges in their channel forming regions are parallel to each other or in similar directions.

4. The method for manufacturing a semiconductor device as claimed in claim 1 or 2, wherein the directions of migration of electric charges in channel forming regions of said plural transistors are parallel to the scanning direction of said laser beam.

5. The method for manufacturing a semiconductor device as claimed in claim 1 or 2, wherein said plural transistors are connected in parallel.

6. The method for manufacturing a semiconductor device as claimed in claim 1 or 2, wherein said laser beam is oscillated from a continuous wave solid laser, gas laser or metal laser.

7. The method for manufacturing a semiconductor device as claimed in claim 1 or 2, wherein said laser beam is oscillated from a laser selected from continuous wave YAG laser, YVO₄ laser, YLF laser, YAlO₃ laser, glass laser, ruby laser, alexandrite laser, and Ti:

sapphire laser.

8. The method for manufacturing a semiconductor device as claimed in claim 1 or 2, wherein said laser beam is oscillated from one laser selected from continuous wave excimer laser, Ar laser, Kr laser, and CO₂ laser.

9. The method for manufacturing a semiconductor device as claimed in claim 1 or 2, wherein said laser beam is oscillated from one laser selected from continuously oscillating helium cadmium laser, copper vapor laser, and gold vapor laser.

2. A method for manufacturing a semiconductor device comprising:

forming an amorphous semiconductor on a substrate having an insulating surface;

forming a metal-containing layer on said amorphous semiconductor and forming a first crystalline semiconductor by heat treatment;

patterning said first crystalline semiconductor into a desired shape to form plural first island-like semiconductors;

irradiating a linearly condensed laser beam on said plural first island-like semiconductors while relatively scanning said substrate, thus forming said plural first island-like semiconductors comprising second crystalline semiconductors;

patterning said first island-like semiconductors comprising said second crystalline semiconductors into a desired shape to form plural second island-like semiconductors;

forming plural transistors using said plural second island-like semiconductors; and

forming a unit circuit using a predetermined number of said transistors, of said plural transistors;

wherein said second island-like semiconductors used for said predetermined number of said transistors are formed from said first island-like semiconductors that are different from each other.