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Method for fabricating an ultra shallow junction of a field effect transistor

  • US 20040072446A1
  • Filed: 07/01/2003
  • Published: 04/15/2004
  • Est. Priority Date: 07/02/2002
  • Status: Abandoned Application
First Claim
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1. A method of fabricating an ultra shallow junction of a field effect transistor, comprising:

  • (a) supplying a substrate comprising a gate structure of the transistor;

    (b) etching a surface of the substrate in source and drain regions of the transistor;

    (c) selectively forming a protective film on said surface of the substrate;

    (d) laterally etching the substrate beneath a gate dielectric of the gate structure; and

    (e) removing the protective film.

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