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Method for manufacturing a silicon sensor and a silicon sensor

  • US 20040074301A1
  • Filed: 11/24/2003
  • Published: 04/22/2004
  • Est. Priority Date: 03/21/2001
  • Status: Active Grant
First Claim
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1. A method for manufacturing a silicon sensor structure, the method comprising the steps of forming by etched openings into a single crystal silicon wafer (10) at least one spring element configuration (7) and at least one seismic mass (8) connected to said spring element configuration (7), characterized in that the openings and trenches (8) extending through the depth of the silicon wafer are fabricated by dry etch methods, and the etch process used for controlling the spring constant of the spring element configuration (7) is based on wet etch methods.

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