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Semiconductor device

  • US 20040075148A1
  • Filed: 06/06/2003
  • Published: 04/22/2004
  • Est. Priority Date: 12/08/2000
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising an n-channel field effect transistor and a p-channel field effect transistor both formed on a substrate, wherein said transistors each comprise an insulated film wrapping a gate electrode and extending to a location adjacent to a source/drain area, and said insulated film is mainly composed of silicon nitride, and the thickness of said insulated film of said n-channel field effect transistor differs from the thickness of said insulated film of said p-channel field effect transistor.

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