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High frequency integrated circuits

  • US 20040075170A1
  • Filed: 10/21/2002
  • Published: 04/22/2004
  • Est. Priority Date: 10/21/2002
  • Status: Abandoned Application
First Claim
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1. An RF integrated circuit device comprising:

  • a. a silicon-on-silicon module comprising a silicon integrated circuit chip bonded to a silicon intermediate interconnection substrate (SIIS), b. a first conductive layer, formed on the SIIS, with an electrical connection between the first conductive layer and the silicon integrated circuit chip, c. an insulating layer on the first conductive layer, d. a second conductive layer, formed on the insulating layer, with an electrical connection between the second conductive layer and the silicon integrated circuit.

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