High frequency integrated circuits
First Claim
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1. An RF integrated circuit device comprising:
- a. a silicon-on-silicon module comprising a silicon integrated circuit chip bonded to a silicon intermediate interconnection substrate (SIIS), b. a first conductive layer, formed on the SIIS, with an electrical connection between the first conductive layer and the silicon integrated circuit chip, c. an insulating layer on the first conductive layer, d. a second conductive layer, formed on the insulating layer, with an electrical connection between the second conductive layer and the silicon integrated circuit.
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Abstract
The specification describes a silicon-on-silicon interconnection arrangement to implement high performance RF impedance matching using off-chip passive components. The RF sections of the system are disintegrated into separate RF functional chips, and the functional chips are flip-chip mounted on a high resistivity silicon intermediate interconnect substrate (SIIS). The passive devices for the impedance matching networks are built into the high resistivity SIIS using thin-film technology.
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Citations
9 Claims
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1. An RF integrated circuit device comprising:
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a. a silicon-on-silicon module comprising a silicon integrated circuit chip bonded to a silicon intermediate interconnection substrate (SIIS), b. a first conductive layer, formed on the SIIS, with an electrical connection between the first conductive layer and the silicon integrated circuit chip, c. an insulating layer on the first conductive layer, d. a second conductive layer, formed on the insulating layer, with an electrical connection between the second conductive layer and the silicon integrated circuit. - View Dependent Claims (2)
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3. An RF integrated circuit device comprising:
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a. a silicon substrate, the silicon substrate having intrinsic resistivity, b. a first high frequency RF integrated circuit chip mounted on the silicon substrate;
c. a second high frequency RF integrated circuit chip mounted on the silicon substrate, d. a thin film capacitor formed on the silicon substrate;
e. a thin film inductor formed on the silicon substrate;
f. interconnection means interconnecting the capacitor and inductor to form an LC circuit;
g. interconnection means electrically connecting the LC circuit between the first high frequency RF integrated circuit and the second high frequency RF integrated circuit. - View Dependent Claims (4, 5, 6, 8, 9)
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7. A high frequency RF integrated circuit device comprising:
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a. a silicon substrate, the silicon substrate having intrinsic resistivity, b. a first high frequency RF integrated circuit chip mounted on the silicon substrate, the first high frequency RF integrated circuit chip comprising an IF circuit block;
c. a second high frequency RF integrated circuit chip mounted on the silicon substrate, the second high frequency RF integrated circuit chip comprising a mixer circuit block;
d. a third high frequency RF integrated circuit chip mounted on the silicon substrate, the third high frequency RF integrated circuit chip comprising a low noise amplifier circuit block;
e. a fourth high frequency RF integrated circuit chip mounted on the silicon substrate, the fourth high frequency RF integrated circuit chip comprising a voltage controlled oscillator circuit block;
f. a plurality of thin film capacitors formed on the silicon substrate;
g. a plurality of thin film inductors formed on the silicon substrate;
h. first interconnection means electrically interconnecting the capacitors and inductors to form a plurality of LC circuits;
j. interconnection means electrically connecting the LC circuits between selected high frequency RF integrated circuit chips.
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Specification