Decoupling capacitor closely coupled with integrated circuit

• US 20040075171A1
• Filed: 10/30/2003
• Published: 04/22/2004
• Est. Priority Date: 07/26/2001
• Status: Active Grant

• Current Assignee: Harris Corporation (L3Harris Technologies, Inc.)
• Original Assignee: Harris Corporation (L3Harris Technologies, Inc.)
• Inventors: Jandzio, Gregory M., Brief, Joseph B., Beck, Donald J., Vinson, Robert S.
• Granted Patent: US 7,145,233 B2
• Time in Patent Office: Days
• US Class Current: 257/724
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48195 the item being a discrete passive component
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/4911 the connectors being bonded to at least one common bonding area, e.g. daisy chain
• CPC Class Codes: H01L 23/50 for integrated circuit devices, e.g. power bus, number of leadsH01L23/482 - H01L23/498 take precedence
• CPC Class Codes: H01L 23/642 Capacitive arrangements H01L23/49589, H01L23/645, H01L23/647, H01L23/66 take precedence; capacitive effects between wiring layers on the semiconductor body H01L23/5222
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 25/0655 the devices being arranged next to each other
• CPC Class Codes: H01L 25/16 the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 Silicon [Si]
• CPC Class Codes: H01L 2924/01023 Vanadium [V]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/09701 Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/14 Integrated circuits
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19042 : being an inductor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/19104 : on the semiconductor or solid-state device, i.e. passive-on-chip
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: Y10T 29/4913 : Assembling to base an electrical component, e.g., capacitor, etc.

Abstract

An integrated circuit module, decoupling capacitor assembly and method are disclosed. The integrated circuit module includes a substrate and integrated circuit die mounted on the substrate and having die pads and an exposed surface opposite from the substrate. A plurality of substrate bonding pads are positioned on the substrate adjacent the integrated circuit die. A decoupling capacitor assembly is mounted on each integrated circuit die and includes a capacitor carrier secured onto the exposed surface of the integrated circuit die and a decoupling capacitor carried by the capacitor carrier. A wire bond extends from the decoupling capacitor assembly to a die pad and from a die pad to a substrate bonding pad.

Claims

1. An integrated circuit chip module comprising:

a substrate;

an integrated circuit die mounted on the substrate and having die pads and an exposed surface opposite from the substrate;

a plurality of substrate bonding pads positioned on the substrate adjacent the integrated circuit die; and

a decoupling capacitor assembly mounted on each integrated circuit die, said decoupling capacitor assembly comprising

a capacitor carrier secured onto the exposed surface of the integrated circuit die, and

a decoupling capacitor carried by the capacitor carrier; and

a wire bond extending from the decoupling capacitor assembly to a die pad and from a die pad to a substrate bonding pad.

2. An integrated circuit chip module according to claim 1, and further comprising a plurality of decoupling capacitor assemblies mounted on said integrated circuit die.

3. An integrated circuit chip module according to claim 2, wherein said plurality of decoupling capacitors are mounted in series along said integrated circuit die.

4. An integrated circuit chip module according to claim 1, and further comprising an adhesive securing said decoupling capacitor to said capacitor carrier.

5. An integrated circuit chip module according to claim 1, and further comprising an adhesive securing said capacitor carrier to said integrated circuit die.

6. An integrated circuit chip module according to claim 1, wherein said capacitor carrier is formed from an aluminum nitride substrate.

7. An integrated circuit chip module according to claim 6, wherein said aluminum nitride substrate ranges in thickness from about 5 mil to about 50 mil.

8. An integrated circuit chip module according to claim 1, wherein a wire bond extends from said decoupling capacitor to a logic pin of said integrated circuit die.

9. An integrated circuit chip module according to claim 1, wherein a wire bond extends from said capacitor carrier to a logic pin of said integrated circuit die.

10. An integrated circuit chip module comprising:

a substrate;

an integrated circuit die mounted on the substrate and having die pads and an exposed surface opposite from the substrate;

a plurality of substrate bonding pads positioned on the substrate adjacent the integrated circuit die; and

a decoupling capacitor assembly mounted on the integrated circuit die, said decoupling capacitor assembly comprising

a capacitor carrier secured onto the exposed surface of the integrated circuit die,

a decoupling capacitor carried by said capacitor carrier;

a thin film metallization layer positioned on said capacitor carrier; and

a conductive adhesive layer engaging said decoupling capacitor and thin film metallization layer and securing said decoupling capacitor to said capacitor carrier;

a wire bond extending from the thin film metallization layer to a logic pin of the integrated circuit die and from a logic pin to a substrate bonding pad.

11. An integrated circuit chip module according to claim 10, and further comprising a plurality of decoupling capacitor assemblies mounted on said integrated circuit die.

12. An integrated circuit chip module according to claim 11, wherein said plurality of decoupling capacitors are mounted in series along said integrated circuit die.

13. An integrated circuit chip module according to claim 10, and further comprising an adhesive securing said decoupling capacitor to said capacitor carrier.

14. An integrated circuit chip module according to claim 10, and further comprising an adhesive securing said decoupling capacitor assembly to said integrated circuit die.

15. An integrated circuit chip module according to claim 10, wherein said capacitor carrier is formed from an aluminum nitride substrate.

16. An integrated circuit chip module according to claim 15, wherein said aluminum nitride substrate ranges in thickness from about 5 mil to about 50 mil.

17. An integrated circuit chip module according to claim 10, wherein a wire bond extends from said capacitor to a logic pin of said integrated circuit die.

18. An integrated circuit chip module according to claim 10, and including a bonding pad on said thin film metallization layer for securing a wire bond.

19. A multi-chip module comprising:

a ceramic substrate;

a plurality of integrated circuit die mounted on the ceramic substrate, each integrated circuit die including die pads and an exposed surface opposite from the ceramic substrate;

a plurality of substrate bonding pads mounted on the substrate adjacent the plurality of integrated circuit die; and

a plurality of decoupling capacitor assemblies positioned on each integrated circuit die, each decoupling capacitor assembly comprising

an aluminum nitride capacitor carrier secured onto the exposed surface of the integrated circuit die, and

a decoupling capacitor carried by the capacitor carrier; and

at least one wire bond extending from each decoupling capacitor assembly to a logic pin and from a logic pin to a substrate bonding pad.

20. A multi-chip module according to claim 19, wherein said ceramic substrate is formed from a plurality of green tape layers.

21. A multi-chip module according to claim 19, wherein a wire bond extends from said capacitor to a logic pin of said integrated circuit die.

22. A multi-chip module according to claim 19, wherein a wire bond extends from said capacitor carrier to a logic pin of said integrated circuit die.

23. A multi-chip module according to claim 19, wherein said aluminum nitride substrate ranges in thickness from about 5 mil to about 50 mil.

24. A multi-chip module according to claim 19, wherein said plurality of decoupling capacitors are mounted in series along said integrated circuit die.

25. A multi-chip module according to claim 19, and further comprising an adhesive securing said decoupling capacitor to said capacitor carrier.

26. A multi-chip module according to claim 19, and further comprising an adhesive securing said decoupling capacitor assembly to said integrated circuit die.

27. A multi-chip module according to claim 19, wherein said plurality of decoupling capacitors are mounted in series along said integrated circuit die.

28. A decoupling capacitor assembly used for decoupling integrated circuit die comprising:

a capacitor carrier formed as an aluminum nitride substrate that is about 5 mil to about 50 mil thickness;

a decoupling capacitor carried by said capacitor carrier; and

an adhesive securing said decoupling capacitor to said capacitor carrier.

29. A decoupling capacitor assembly according to claim 28, and further comprising a thin film metallization layer formed on the capacitor carrier, wherein said adhesive comprises a conductive adhesive for conducting current between said capacitor and said capacitor carrier.

30. A decoupling capacitor assembly according to claim 28, and further comprising a bonding pad positioned on said capacitor carrier for connecting a wire bond thereto.

31. A decoupling capacitor assembly according to claim 28, and further comprising a bonding pad positioned on said decoupling capacitor for connecting a wire bond thereto.

32. A method of forming an integrated circuit chip module comprising the steps of:

adhesively securing a decoupling capacitor onto a capacitor carrier to form a decoupling capacitor assembly;

adhesively securing the decoupling capacitor assembly onto an integrated circuit die that had been mounted onto a substrate; and

wire bonding from the decoupling capacitor assembly to the integrated circuit die and from the integrated circuit die onto substrate bonding pads positioned on the substrate.

33. A method according to claim 32, and further comprising the step of forming a thin film metallization layer on the capacitor carrier, and adhesively securing the decoupling capacitor with a conductive adhesive that engages the thin film metallization layer, and wire bonding from the capacitor carrier to the integrated circuit die.

34. A method according to claim 32, wherein the wire bonding from the decoupling capacitor onto the integrated circuit die.

35. A method according to claim 32, and further comprising the step of forming the capacitor carrier as an aluminum nitride substrate that is about 5 mil to about 50 mil thickness.

36. A method according to claim 32, and further comprising the step of forming the substrate as a ceramic substrate.

37. A method according to claim 32, and further comprising the step of forming the substrate as a polymeric substrate.