III-nitride light emitting devices fabricated by substrate removal
First Claim
1. A method of making a light-emitting device, the method comprising:
- growing a III-nitride light-emitting structure on a growth substrate, the III-nitride light-emitting structure including a p-type layer, an n-type layer, and a light-emitting layer;
wafer bonding the III-nitride light-emitting structure to a host substrate; and
after wafer bonding the III-nitride light-emitting structure to a host substrate, removing the growth substrate.
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Abstract
A III-nitride light-emitting structure including a p-type layer, an n-type layer, and a light emitting layer is grown on a growth substrate. The III-nitride light-emitting structure is wafer bonded to a host substrate, then the growth substrate is removed. In some embodiments, a first electrical contact and first bonding layer are formed on the III-nitride light-emitting structure. A second bonding layer is formed on the host substrate. In such embodiments, wafer bonding the III-nitride light emitting structure to the host substrate comprises bonding the first bonding layer to the second bonding layer. After the growth substrate is removed, a second electrical contact may be formed on a side of the III-nitride light-emitting device exposed by removal of the growth substrate.
53 Citations
15 Claims
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1. A method of making a light-emitting device, the method comprising:
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growing a III-nitride light-emitting structure on a growth substrate, the III-nitride light-emitting structure including a p-type layer, an n-type layer, and a light-emitting layer;
wafer bonding the III-nitride light-emitting structure to a host substrate; and
after wafer bonding the III-nitride light-emitting structure to a host substrate, removing the growth substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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Specification