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Method of depositing a material layer

  • US 20040077161A1
  • Filed: 10/09/2001
  • Published: 04/22/2004
  • Est. Priority Date: 10/09/2001
  • Status: Active Grant
First Claim
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1. A method of thin film deposition, comprising:

  • positioning a substrate having high aspect ratio features in a deposition chamber;

    providing a gas mixture to the deposition chamber, wherein the gas mixture comprises one or more process gases and one or more etch species; and

    depositing a material layer on the substrate, wherein the etch species in the gas mixture selectively removes portions of the material layer deposited adjacent to the high aspect ratio features.

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