Method of depositing a material layer

• US 20040077161A1
• Filed: 10/09/2001
• Published: 04/22/2004
• Est. Priority Date: 10/09/2001
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Beinglass, Israel, Chen, Liang-Yuh, Carl, Daniel A.
• Granted Patent: US 7,115,516 B2
• Time in Patent Office: Days
• US Class Current: 438/622
• CPC Class Codes: C23C 14/046 Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
• CPC Class Codes: C23C 16/045 Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
• CPC Class Codes: C23C 16/45589 Movable means, e.g. fans
• CPC Class Codes: H01L 21/2855 by physical means, e.g. sputtering, evaporation H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/28556 by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76865 Selective removal of parts of the layer H01L21/76844 takes precedence

Abstract

A method of layer formation on a substrate with high aspect ratio features is disclosed. The layer is formed from a gas mixture comprising one or more process gases and one or more etch species. The one or more process gases react to deposit a material layer on the substrate. In conjunction with the material layer deposition, the etch species selectively remove portions of the deposited material layer adjacent to high aspect ratio feature openings, filling such features in a void-free and/or seam-free manner. The material layer may be deposited on the substrate using physical vapor deposition (PVD) and/or chemical vapor deposition (CVD) techniques.

Claims

1. A method of thin film deposition, comprising:

positioning a substrate having high aspect ratio features in a deposition chamber;

providing a gas mixture to the deposition chamber, wherein the gas mixture comprises one or more process gases and one or more etch species; and

depositing a material layer on the substrate, wherein the etch species in the gas mixture selectively removes portions of the material layer deposited adjacent to the high aspect ratio features.

2. The method of claim 1 wherein the ratio of the height to the width of the high aspect ratio features is greater than about 4:

1.

3. The method of claim 1 wherein the etch species are provided to the chamber through one or more orifices capable of directing such etch species in a collimated manner toward the substrate.

4. The method of claim 3 wherein a pressure gradient exists across the orifices comprising a first pressure upstream from the orifices and a second pressure downstream from the orifices.

5. The method of claim 4 wherein a first pressure is greater than the second pressure.

6. The method of claim 3 wherein the one or more orifices are movable relative to the substrate.

7. The method of claim 6 wherein the one or more etch orifices move relative to the substrate at a frequency greater than about 5 Hz.

8. The method of claim 1 wherein the deposition chamber is a chemical vapor deposition (CVD) chamber or a physical vapor deposition (PVD) chamber.

9. The method of claim 1 wherein the material layer is formed of a material selected from the group consisting of a metal, a metal nitride and an oxide.

10. A method of forming an interconnect structure, comprising:

positioning a substrate having high aspect ratio features in a deposition chamber;

providing a first gas mixture to the deposition chamber, wherein the first gas mixture comprises one or more first process gases and one or more first etch species; and

depositing a barrier layer on the substrate, wherein the first etch species in the first gas mixture selectively removes portions of the barrier layer deposited adjacent to the high aspect ratio features.

11. The method of claim 10 further comprising:

providing a second gas mixture to the deposition chamber, wherein the second gas mixture comprises one or more second process gases and one or more second etch species; and

depositing a metal layer on the barrier layer, wherein the second etch species in the second gas mixture selectively removes portions of the metal layer deposited adjacent to the high aspect ratio features.

12. The method of claim 10 wherein the ratio of the height to the width of the high aspect ratio features is greater than about 4:

1.

13. The method of claim 11 wherein the first and second etch species are provided to the chamber through one or more orifices capable of directing such etch species in a collimated manner toward the substrate.

14. The method of claim 13 wherein a pressure gradient exists across the orifices comprising a first pressure upstream from the orifices and a second pressure downstream from the orifices.

15. The method of claim 14 wherein a first pressure is greater than the second pressure.

16. The method of claim 10 wherein the deposition chamber is a chemical vapor deposition (CVD) chamber or a physical vapor deposition (PVD) chamber.

17. The method of claim 10 wherein the barrier layer is formed of a material selected from the group consisting of a metal and a metal nitride.

18. A method of forming a trench structure, comprising:

positioning a substrate having high aspect ratio features in a deposition chamber;

providing a gas mixture to the deposition chamber, wherein the gas mixture comprises one or more process gases and one or more etch species; and

depositing an oxide layer on the substrate, wherein the etch species in the gas mixture selectively removes portions of the material layer deposited adjacent to the high aspect ratio features.

19. The method of claim 18 wherein the ratio of the height to the width of the high aspect ratio features is greater than about 4:

1.

20. The method of claim 18 wherein the etch species are provided to the chamber through one or more orifices capable of directing such etch species in a collimated manner toward the substrate.

21. The method of claim 20 wherein a pressure gradient exists across the orifices comprising a first pressure upstream from the orifices and a second pressure downstream from the orifices.

22. The method of claim 21 wherein a first pressure is greater than the second pressure.

23. The method of claim 18 wherein the deposition chamber is a chemical vapor deposition (CVD) chamber.