Biomedical ion sensitive semiconductor sensor and sensor array

• US 20040079636A1
• Filed: 10/25/2002
• Published: 04/29/2004
• Est. Priority Date: 10/25/2002
• Status: Abandoned Application

• Current Assignee: Microbase Technology Corp.
• Original Assignee: Microbase Technology Corp.
• Inventors: Lai, Chao-Sung, Yang, Chai-Ming, Shih, Wang-Ping, Hsia, Chin
• Application Number:
  US10/279,796
• Publication Number:
  US 20040079636A1
• Time in Patent Office: Days
• US Class Current: 204/403.01
• CPC Class Codes: G01N 27/4145 specially adapted for biomolecules, e.g. gate electrode with immobilised receptors

Abstract

A biomedical ion sensitive sensor for sensing an ion concentration of a biomedicine sample includes an insulation layer formed on a substrate having a source region and a drain region. A gate oxide layer formed on the surface of the source region, the drain region, and the insulation layer. A chemical membrane layer is formed on the gate oxide layer. A concave ion sensitive portion is formed at an area of the surface of the chemical membrane layer defined between the source region and the drain region, and a rough surface is further formed on the ion sensitive portion. The ion sensitive film is made of Si₃N₄, SiO₂, Al₂O₃, Ta₂O₅, SnO₂, ZrO₂, or HfO₂. A plurality of biomedical ion sensitive semiconductor sensors are communicated with reactant micro-fluid channels to form a biomedical ion sensitive semiconductor sensor array.

Claims

1. A biomedical ion sensitive semiconductor sensor for sensing an ion concentration of a biomedicine sample, comprising:

a substrate;

a source region formed in the substrate;

a drain region formed in the substrate;

an insulation layer formed on the substrate and leaving an opening portion with side walls on the source region and the drain region respectively;

a gate oxide layer formed on the insulation layer and the side walls of the insulation layer; and

a chemical membrane layer formed on the gate oxide layer, a concave ion sensitive portion being formed at a top surface of the chemical membrane layer defined between the source region and the drain region for carrying the biomedicine sample to be tested thereon, and a rough surface being further formed on the ion sensitive portion of the chemical membrane layer.

2. The biomedical ion sensitive semiconductor sensor as claimed in claim 1, wherein the insulation layer is made of silicon oxide.

3. The biomedical ion sensitive semiconductor sensor as claimed in claim 2, wherein the thickness of the insulation layer is about 5000 Å

.

4. The biomedical ion sensitive semiconductor sensor as claimed in claim 1, wherein the thickness of the gate oxide layer is about 1000 Å

.

5. The biomedical ion sensitive semiconductor sensor as claimed in claim 1, wherein the chemical membrane layer is selected from Si₃N₄, SiO₂, Al₂O₃, Ta₂O₅, SnO₂, ZrO₂, or HfO₂.

6. The biomedical ion sensitive semiconductor sensor as claimed in claim 5, wherein the thickness of the chemical membrane layer is about 1000 Å

.

7. The biomedical ion sensitive semiconductor sensor as claimed in claim 1, wherein the ion sensitive portion is about 100-800 μ

m².

8. A biomedical ion sensitive semiconductor sensor array for sensing an ion concentration of a biomedicine sample, comprising:

a plurality of biomedical ion sensitive semiconductor sensors, each of which comprising a sensitive gate, for generating at least one signal representing the ion concentration of the biomedicine sample;

a plurality of reactant micro-fluid channels communicating with each sensitive gate of the biomedical ion sensitive semiconductor sensor respectively for supplying the biomedicine sample to the sensitive gates of the biomedical ion sensitive semiconductor sensors; and

a control unit coupled to the biomedical ion sensitive semiconductor sensors for detecting and reading the signal generated from the biomedical ion sensitive semiconductor sensors.

9. The biomedical ion sensitive semiconductor sensor array as claimed in claim 8, wherein each biomedical ion sensitive semiconductor sensor comprises:

a substrate;

a source region formed in the substrate;

a drain region formed in the substrate;

an insulation layer formed on the substrate and leaving an opening portion with side walls on the source region and the drain region respectively;

a gate oxide layer formed on the insulation layer and the side walls of the insulation layer; and

a chemical membrane layer formed on the gate oxide layer, a concave ion sensitive portion being formed at a top surface of the chemical membrane layer defined between the source region and the drain region for carrying the biomedicine sample to be tested thereon, and a rough surface being further formed on the ion sensitive portion of the chemical membrane layer.

10. The biomedical ion sensitive semiconductor sensor as claimed in claim 9, wherein the insulation layer is made of silicon oxide.

11. The biomedical ion sensitive semiconductor sensor as claimed in claim 9, wherein the chemical membrane layer is selected from Si₃N₄, SiO₂, Al₂O₃, Ta₂O₅, SnO₂, ZrO₂, or HfO₂.

12. The biomedical ion sensitive semiconductor sensor array as claimed in claim 8, wherein each of the reactant micro-fluid channels has a different dimension from each others.

13. The biomedical ion sensitive semiconductor sensor array as claimed in claim 8, further comprising a display unit connected to the control unit.