Back side incident type image pickup sensor
First Claim
1. A back side incident type image pickup sensor having on the front side of a semiconductor substrate a photoelectric conversion portion and an electric circuit, and having on the back side of the semiconductor substrate an opening through which a radiation beam is incident, the incident radiation beam being detected by the photoelectric conversion portion formed on the front side of the semiconductor substrate, wherein the electric circuit is disposed at a given distance in the horizontal direction from the opening.
1 Assignment
0 Petitions
Accused Products
Abstract
A back side incident type image pickup sensor in which lowering of spatial resolution is eliminated and influence of stray light is removed is provided. Electric circuits including a driver circuit for driving a photoelectric conversion portion and a signal processing circuit for processing signals from the photoelectric conversion portion are each placed on the front side of a single crystal silicon substrate at a given distance in the horizontal direction from an opening. Influence of stray light is thus eliminated. The semiconductor substrate has high refractive index, thereby essentially allowing little lowering of spatial resolution. Lowering of spatial resolution is further prevented if the substrate is thinned.
-
Citations
12 Claims
- 1. A back side incident type image pickup sensor having on the front side of a semiconductor substrate a photoelectric conversion portion and an electric circuit, and having on the back side of the semiconductor substrate an opening through which a radiation beam is incident, the incident radiation beam being detected by the photoelectric conversion portion formed on the front side of the semiconductor substrate, wherein the electric circuit is disposed at a given distance in the horizontal direction from the opening.
Specification