Semiconductor apparatus and fabrication method of the same

• US 20040079941A1
• Filed: 10/16/2003
• Published: 04/29/2004
• Est. Priority Date: 10/18/2002
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Ohno, Yumiko, Takayama, Toru, Maruyama, Junya, Yamazaki, Shunpei
• Granted Patent: US 7,067,392 B2
• Time in Patent Office: Days
• US Class Current: 257/40
• CPC Class Codes: H01L 2221/68368 used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
• CPC Class Codes: H01L 23/12 Mountings, e.g. non-detachable insulating substrates
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1218 with a particular composition or structure of the substrate
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H10K 2102/311 Flexible OLED
• CPC Class Codes: H10K 50/841 Self-supporting sealing arrangements
• CPC Class Codes: H10K 50/87 Arrangements for heating or cooling
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 59/17 Passive-matrix OLED displays
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 71/80 using temporary substrates
• CPC Class Codes: H10K 77/111 Flexible substrates
• CPC Class Codes: Y02E 10/549 Organic PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

It is an object of the present invention to provide a semiconductor device capable of preventing deterioration due to penetration of moisture or oxygen, for example, a light-emitting apparatus having an organic light-emitting device that is formed over a plastic substrate, and a liquid crystal display apparatus using a plastic substrate. According to the present invention, devices formed on a glass substrate or a quartz substrate (a TFT, a light-emitting device having an organic compound, a liquid crystal device, a memory device, a thin-film diode, a pin-junction silicon photoelectric converter, a silicon resistance element, or the like) are separated from the substrate, and transferred to a plastic substrate having high thermal conductivity.

Claims

1. A semiconductor apparatus comprising:

a plastic substrate or a plastic base material each of which has thermal conductivity as a support medium;

an adhesive in contact with the plastic substrate or the plastic base material;

an insulating film in contact with the adhesive; and

a device over the insulating film.

2. An apparatus according to claim 1, wherein the device is a thin-film transistor, a light-emitting device including a light-emitting layer containing an organic compound, a liquid crystal device, a memory device, a pin-junction silicon photoelectric converter, or a silicon resistance element.

3. An apparatus according to claim 1, wherein the adhesive has thermal conductivity.

4. An apparatus according to claim 1, wherein each the plastic substrate or the plastic base material has higher thermal conductivity than that of the adhesive.

5. An apparatus according to claim 1, wherein the plastic substrate or the plastic base material each of which has thermal conductivity is formed of a mixture of low-melting metals, ceramics, and synthetic resin, the synthetic resin comprising a material selected from the group consisting of polypropylene, polypropylene sulfide, polycarbonate, polyetherimide, polyphenylene sulfide, polyphenylene oxide, polysulfone, and polyphthalamide.

6. An apparatus according to claim 1, wherein the adhesive contains powder or filler comprising a material selected from the group consisting of silver, nickel, aluminum, and aluminum nitride.

7. An apparatus according to claim 1, wherein the semiconductor apparatus is incorporated into one selected from the group consisting of a video camera, a digital camera, a goggle type display, a car navigation, a personal computer, and a portable information terminal.

8. A method for manufacturing a semiconductor apparatus comprising:

forming a release layer including a semiconductor device over a first substrate;

coating an organic resin film that melts with solvent over the release layer;

bonding a second substrate to the organic resin film with a first two-sided tape to sandwich the release layer and the organic resin film between the first substrate and the second substrate;

bonding a third substrate to the first substrate with a second two-sided tape;

separating the first substrate to which the third substrate is bonded from the release layer by a physical means;

bonding a fourth substrate to the release layer to sandwich the release layer between the second substrate and the fourth substrate;

separating the release layer and the first two-sided tape from the second substrate;

separating the release layer from the first two-sided tape; and

removing the organic resin film with solvent.

9. A method according to claim 8, wherein the solvent is water or alcohol.

10. A method according to claim 8, wherein adhesiveness of the first two-sided tape and the second substrate in the seventh process is stronger than that of the release layer and the fourth substrate.

11. A method for manufacturing a semiconductor apparatus comprising:

forming a release layer including a semiconductor device over a first substrate;

coating an organic resin film that melts with solvent over the release layer;

bonding a second substrate to the organic resin film with a first two-sided tape to sandwich the release layer and the organic resin film between the first substrate and the second substrate;

bonding a third substrate to the first substrate with the second two-sided tape;

separating the first substrate to which the third substrate is bonded from the release layer by a physical means;

bonding a fourth substrate to the release layer to sandwich the release layer between the second substrate and the fourth substrate;

separating the release layer and first two-sided tape from the second substrate;

separating the release layer from the first two-sided tape;

removing the organic resin film with solvent; and

bonding a fifth substrate to the release layer with a second adhesive to sandwich the release layer between the fourth substrate and the fifth substrate.

12. A method according to claim 11, wherein the solvent is water or alcohol.

13. A method according to claim 11, wherein adhesiveness of the first two-sided tape and the second substrate in the seventh process is stronger than that of the release layer and the fourth substrate.

14. A method according to claim 11, wherein the first substrate is a glass substrate, the second and the third substrates are a quartz substrate or a metal substrate, and the fourth substrate and the fifth substrate are plastic substrates.

15. A method according to claim 11, wherein the first substrate is a glass substrate, the second and the third substrates are a quartz substrate or a metal substrate, and among the fourth and the fifth substrate, one is a plastic substrate being transparent to light and another is a plastic substrate having thermal conductivity.

16. A method according to claim 11, wherein the fourth or the fifth substrate is a plastic substrate on the surface of which a SiN_x film, a SiN_xO_y film, an AlN_x film, or an AlN_xO_y film is formed.

17. A method for manufacturing a semiconductor apparatus comprising:

forming a release layer including a TFT over a first substrate;

coating an organic resin film that melts with solvent over the release layer;

bonding a second substrate to the organic resin film with a first two-sided tape to sandwich the release layer and the organic resin film between the first substrate and the second substrate;

bonding a third substrate to the first substrate with the second two-sided tape;

separating the first substrate to which the third substrate is bonded from the release layer by a physical means;

bonding a fourth substrate to the release layer with a first adhesive to sandwich the release layer between the second substrate and the fourth substrate;

separating the release layer and the first two-sided tape from the second substrate;

separating the release layer from the first two-sided tape;

removing the organic resin film with solvent;

fabricating a light-emitting device including an organic compound over the release layer; and

bonding a fifth substrate for sealing the light-emitting device to the release layer with a second adhesive to sandwich the release layer between the fourth substrate and the fifth substrate.

18. A method according to claim 17, wherein the solvent is water or alcohol.

19. A method according to claim 17, wherein adhesiveness of the first two-sided tape and the second substrate in the seventh process is stronger than that of the release layer and the fourth substrate.

20. A method according to claim 17, wherein the solvent is water or alcohol.

21. A method according to claim 17, wherein adhesiveness of the first two-sided tape and the second substrate in the seventh process is stronger than that of the release layer and the fourth substrate.

22. A method according to claim 17, wherein the first substrate is a glass substrate, the second and the third substrates are a quartz substrate or a metal substrate, and the fourth substrate and the fifth substrate are plastic substrates.

23. A method according to claim 17, wherein the first substrate is a glass substrate, the second and the third substrates are a quartz substrate or a metal substrate, and among the fourth and the fifth substrate, one is a plastic substrate being transparent to light and another is a plastic substrate having thermal conductivity.

24. A method according to claim 17, wherein the fourth or the fifth substrate is a plastic substrate on the surface of which a SiN_x film, a SiN_xO_y film, an AlN_x film, or an AlN_xO_y film is formed.