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Integrated thin film capacitor/inductor/interconnect system and method

  • US 20040080021A1
  • Filed: 10/15/2003
  • Published: 04/29/2004
  • Est. Priority Date: 09/21/2001
  • Status: Active Grant
First Claim
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1. A thin film capacitor/inductor/interconnect method comprising:

  • (1) thinly metalizing a substrate with a lower electrode and interconnect layer formed on said thin film hybrid substrate, said layer further comprising a lower adhesive layer and an upper conducting layer having a sum total thickness of less than or equal to 1.5 microns;

    (2) applying/imaging photoresist and etching to form metal patterns on said substrate for lower capacitor electrodes and interconnect;

    (3) applying a thin dielectric layer to said metal patterns;

    (4) applying/imaging photoresist and etching to form contact holes in said dielectric layer and optionally selectively patterning said dielectric layer;

    (5) metalizing said substrate to make contact with said lower capacitor electrodes and interconnect;

    (6) applying/imaging photoresist and etching to form patterns for upper capacitor electrodes, inductors, and/or interconnect conductors;

    (7) optionally forming resistor elements by applying/imaging photoresist and etching a resistor layer on said substrate;

    wherein said upper conducting layer is approximately 0.25 microns thick.

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