Lead frame, method of manufacturing the same, and semiconductor device manufactured with the same

• US 20040080025A1
• Filed: 09/15/2003
• Published: 04/29/2004
• Est. Priority Date: 09/17/2002
• Status: Abandoned Application

• Current Assignee: Shinko Electric Industries Company Limited (Fujitsu Limited)
• Original Assignee: Shinko Electric Industries Company Limited (Fujitsu Limited)
• Inventors: Kasahara, Tetsuichiro, Abe, Akinobu
• Application Number:
  US10/661,484
• Publication Number:
  US 20040080025A1
• Time in Patent Office: Days
• US Class Current: 257/666
• CPC Class Codes: H01L 21/4821 Flat leads, e.g. lead frames with or without insulating supports
• CPC Class Codes: H01L 21/4828 Etching etching for cleaning without patterning H01L21/4835
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49433 outside the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/85 using a wire connector
• CPC Class Codes: H01L 2224/85005 being a temporary or sacrificial substrate
• CPC Class Codes: H01L 2224/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 23/3107 the device being completely enclosed
• CPC Class Codes: H01L 23/49541 Geometry of the lead-frame
• CPC Class Codes: H01L 23/49548 Cross section geometry H01L23/49562 takes precedence
• CPC Class Codes: H01L 23/49582 Metallic layers on lead frames
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01046 Palladium [Pd]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/18301 : being an anchoring portion, i.e. mechanical interlocking between the encapsulation resin and another package part
• CPC Class Codes: H01L 2924/207 : Diameter ranges

Abstract

In a lead frame, a die-pad portion is defined for a semiconductor element to be mounted, a plurality of wire bonding portions are arranged along a periphery of the die-pad portion within a region to be finally divided as a semiconductor device for the die-pad portion, and a plurality of land-like external terminal portions are arranged in a region outside the wire bonding portions. Furthermore, a plurality of linear connection lead portions are formed to integrally join the wire bonding portions to the respective corresponding external terminal portions. The die-pad portion, the wire bonding portions, the external terminal portions and the connection lead portions are supported by an adhesive tape.

Claims

1. A lead frame comprising:

a die-pad portion defined for a semiconductor element to be mounted;

a plurality of wire bonding portions arranged along a periphery of the die-pad portion within a region to be finally divided as a semiconductor device for the die-pad portion;

a plurality of land-like external terminal portions arranged in a region outside the wire bonding portions; and

a plurality of linear connection lead portions each integrally joining each of the wire bonding portions to a corresponding one of the external terminal portions,

wherein the die-pad portion, the wire bonding portions and the external terminal portions are supported by an adhesive tape.

2. The lead frame according to claim 1, wherein each of the connection lead portions is formed to be thinner than each of the wire bonding portions and each of the external terminal portions, and each of the wire bonding portions is formed to be as thick as each of the external terminal portions.

3. A lead frame comprising:

a plurality of wire bonding portions arranged within a region to be finally divided as a semiconductor device for a semiconductor element to be mounted, and along an outer periphery of the region;

a plurality of land-like external terminal portions arranged in a region inside the wire bonding portions; and

a plurality of linear connection lead portions each integrally joining each of the wire bonding portions to a corresponding one of the external terminal portions,

wherein the wire bonding portions and the external terminal portions are supported by an adhesive tape.

4. The lead frame according to claim 3, wherein each of the connection lead portions is formed to be thinner than each of the wire bonding portions and each of the external terminal portions, and each of the wire bonding portions is formed to be as thick as each of the external terminal portions.

5. A method of manufacturing a lead frame, comprising the steps of:

forming a base frame by etching a metal plate, the base frame including a plurality of wire bonding portions, a plurality of land-like external terminal portions and a plurality of linear connection lead portions arranged in a region between a die-pad portion and a frame portion for a semiconductor element to be mounted, said plurality of wire bonding portions being located along a periphery of the die-pad portion and joined to the die-pad portion, said plurality of external terminal portions being located outside the wire bonding portions and joined to each other, said plurality of connection lead portions each integrally joining each of the wire bonding portions to a corresponding one of the external terminal portions;

forming recess portions by half etching, in portions other than the die-pad portion, the wire bonding connection portions, the external terminal portions and the frame portion, of one surface of the base frame;

attaching an adhesive tape to the surface of the base frame where the recess portions are formed; and

cutting off portions joining the die-pad portion and the wire bonding portions, and portions joining the external terminal portions to each other, among the portions of the base frame where the recess portions are formed.

6. The method according to claim 5, further comprising a step of forming a metal film on an entire surface of the base frame, after forming the recess portions, and before attaching the adhesive tape.

7. A method of manufacturing a lead frame, comprising the steps of:

forming a base frame by simultaneously etching both surfaces of a metal plate using resists patterned into predetermined shapes, respectively, the base frame including a plurality of wire bonding portions, a plurality of land-like external terminal portions and a plurality of linear connection lead portions arranged in a region between a die-pad portion and a frame portion for a semiconductor element to be mounted, said plurality of wire bonding portions being located along a periphery of the die-pad portion and joined to the die-pad portion, said plurality of external terminal portions being located outside the wire bonding portions and joined to each other, said plurality of connection lead portions each integrally joining each of the wire bonding portions to a corresponding one of the external terminal portions, and simultaneously forming recess portions in portions other than the die-pad portion, the wire bonding connection portions, the external terminal portions and the frame portion, of one surface of the base frame;

attaching an adhesive tape to the surface of the base frame where the recess portions are formed; and

cutting off portions joining the die-pad portion and the wire bonding portions, and portions joining the external terminal portions to each other, among the portions of the base frame where the recess portions are formed.

8. The method according to claim 7, further comprising a step of forming a metal film on an entire surface of the base frame, after forming the recess portions, and before attaching the adhesive tape.

9. A method of manufacturing a lead frame, comprising the steps of:

forming a base frame by etching a metal plate, the base frame including a plurality of wire bonding portions, a plurality of land-like external terminal portions and a plurality of linear connection lead portions arranged in a region surrounded by a frame portion for a semiconductor element to be mounted, said plurality of wire bonding portions being located along an outer periphery of the region and joined to the frame portion, said plurality of external terminal portions being located inside the wire bonding portions and joined to each other, said plurality of connection lead portions each integrally joining each of the wire bonding portions to a corresponding one of the external terminal portions;

forming recess portions by half etching, in portions other than the external terminal portions, the wire bonding portions and the frame portion, of one surface of the base frame;

attaching an adhesive tape to the surface of the base frame where the recess portions are formed; and

cutting off portions joining the external terminal portions to each other, among the portions of the base frame where the recess portions are formed.

10. The method according to claim 9, further comprising a step of forming a metal film on an entire surface of the base frame, after forming the recess portions, and before attaching the adhesive tape.

11. A method of manufacturing a lead frame, comprising the steps of:

forming a base frame by simultaneously etching both surfaces of a metal plate using resists patterned into predetermined shapes, respectively, the base frame including a plurality of wire bonding portions, a plurality of land-like external terminal portions and a plurality of linear connection lead portions arranged in a region surrounded by a frame portion for a semiconductor element to be mounted, said plurality of wire bonding portions being located along an outer periphery of the region and joined to the frame portion, said plurality of external terminal portions being located inside the wire bonding portions and joined to each other, said plurality of connection lead portions each integrally joining each of the wire bonding portions to a corresponding one of the external terminal portions, and simultaneously forming recess portions in portions other than the external terminal portions, the wire bonding connection portions and the frame portion, of one surface of the base frame;

attaching an adhesive tape to the surface of the base frame where the recess portions are formed; and

cutting off portions joining the external terminal portions to each other, among the portions of the base frame where the recess portions are formed.

12. The method according to claim 11, further comprising a step of forming a metal film on an entire surface of the base frame, after forming the recess portions, and before attaching the adhesive tape.

13. A semiconductor device comprising:

a die-pad portion;

a plurality of wire bonding portions arranged along a periphery of the die-pad portion;

a plurality of land-like external terminal portions arranged outside the wire bonding portions;

a plurality of linear connection lead portions each integrally joining each of the wire bonding portions to a corresponding one of the external terminal portions; and

a semiconductor element mounted on the die-pad portion,

wherein each of electrode terminals of the semiconductor element is connected to a top surface of a corresponding one of the wire bonding portions by a bonding wire,

the semiconductor element, the bonding wire, the wire bonding portions, the external terminal portions and the connection lead portions are sealed with sealing resin, and

bottom surfaces of the external terminal portions are exposed to a surface of the sealing resin together with bottom surfaces of the wire bonding portions.

14. The semiconductor device according to claim 13, wherein each of the connection lead portions is formed to be thinner than each of the wire bonding portions and each of the external terminal portions, and each of the wire bonding portions is formed to be as thick as each of the external terminal portions.

15. A semiconductor device comprising:

a plurality of wire bonding portions arranged along a periphery of the device;

a plurality of land-like external terminal portions arranged inside the wire bonding portions;

a plurality of linear connection lead portions each integrally joining each of the wire bonding portions to a corresponding one of the external terminal portions; and

a semiconductor element mounted on a required number of external terminal portions among said plurality of external terminal portions, while keeping isolated from the required number of external terminal portions,

wherein each of electrode terminals of the semiconductor element is connected to a top surface of a corresponding one of the wire bonding portions by a bonding wire,

the semiconductor element, the bonding wire, the wire bonding portions, the external terminal portions and the connection lead portions are sealed with sealing resin, and

bottom surfaces of the external terminal portions are exposed to a surface of the sealing resin together with bottom surfaces of the wire bonding portions.

16. The semiconductor device according to claim 15, wherein each of the connection lead portions is formed to be thinner than each of the wire bonding portions and each of the external terminal portions, and each of the wire bonding portions is formed to be as thick as each of the external terminal portions.