Synchrotron radiation measurement apparatus, X-ray exposure apparatus, and device manufacturing method
First Claim
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1. A measurement apparatus comprising:
- a first detector for measuring an intensity such that a sheet-shaped beam of synchrotron radiation is integrated over the entire range of the beam in the thickness direction of the beam;
a second detector for measuring the intensity of the beam at two points where positions along the thickness direction of the beam are different; and
a calculator for calculating the magnitude of the beam in the thickness direction of the beam on the basis of the detections by said first and second detectors.
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Abstract
A measurement apparatus has a first detector for measuring an intensity such that a sheet-shaped beam of synchrotron radiation is integrated over the entire range of the beam in the thickness direction thereof; a second detector for measuring the intensity of the beam at two points where positions along the direction are different; and a calculating device for calculating the magnitude of the beam in the direction on the basis of the detections by the first and second detectors.
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Citations
27 Claims
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1. A measurement apparatus comprising:
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a first detector for measuring an intensity such that a sheet-shaped beam of synchrotron radiation is integrated over the entire range of the beam in the thickness direction of the beam;
a second detector for measuring the intensity of the beam at two points where positions along the thickness direction of the beam are different; and
a calculator for calculating the magnitude of the beam in the thickness direction of the beam on the basis of the detections by said first and second detectors. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A measurement method comprising the steps of:
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measuring an intensity such that a sheet-shaped beam of synchrotron radiation is integrated over the entire range of the beam in the thickness direction of the beam;
measuring the intensity of the beam at two points where positions along the thickness direction of the beam are different; and
calculating the magnitude of the beam in the thickness direction of the beam on the basis of the respective measurements. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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19. An X-ray exposure apparatus comprising:
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a mirror for reflecting an X-ray beam from a synchrotron radiation source;
a stage which holds a substrate to be exposed to the X-ray beam; and
a measuring device disposed in proximity of said mirror, for measuring the intensity distribution of the X-ray beam irradiating the substrate, the measuring device comprising;
a first detector for measuring an intensity such that a sheet-shaped beam of synchrotron radiation is integrated over the entire range of the beam in the thickness direction thereof;
a second detector for measuring the intensity of said beam at two points where positions along said direction are different; and
calculating means for calculating the magnitude of said beam in said direction on the basis of the detections by said first and second detectors. - View Dependent Claims (20, 21, 22, 23)
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24. A semiconductor device manufacturing method comprising:
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generating an X-ray beam from a synchrotron radiation source;
reflecting the X-ray beam by a mirror to irradiate a substrate with the X-ray beam;
measuring in proximity to said mirror, intensity distribution of the X-ray beam irradiating the substrate, the measuring step comprising;
measuring an intensity such that a sheet-shaped beam of synchrotron radiation is integrated over the entire range of the beam in the thickness direction thereof;
measuring the intensity of said beam at two points where positions along said direction are different; and
calculating the magnitude of said beam in said thickness direction on the basis of the respective measurements; and
exposing the substrate to the X-ray beam so as to transfer patterns of a semiconductor device. - View Dependent Claims (25, 26, 27)
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Specification