Method for manufacturing a wafer level chip scale package
First Claim
1. A method for a wafer level chip scale package (CSP), the method comprising:
- providing a semiconductor wafer, the semiconductor wafer including semiconductor chips having chip pads and a passivation layer, the wafer further including scribe lines between the chips;
forming a first patterned dielectric layer on the passivation layer to expose the chip pads; and
forming a second patterned dielectric layer on the first patterned dielectric layer to expose the chip pads, wherein the second patterned dielectric layer has an embossed portion where a ball pad is to be formed.
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Accused Products
Abstract
A semiconductor wafer with semiconductor chips having chip pads and a passivation layer is provided. First and second dielectric layers are sequentially formed on the passivation layer. The first and second dielectric layers form a ball pad area that includes an embossed portion, i.e., having a non-planar surface. A metal wiring layer is formed on the resulting structure including the embossed portion. A third dielectric layer is formed on the metal wiring layer. A portion of the third dielectric layer located on the embossed portion is removed to form a ball pad. A solder ball is formed on the embossed ball pad. With the embossed ball pad, the contact area between the solder balls and the metal wiring layer is increased, thereby improving the connection reliability.
54 Citations
17 Claims
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1. A method for a wafer level chip scale package (CSP), the method comprising:
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providing a semiconductor wafer, the semiconductor wafer including semiconductor chips having chip pads and a passivation layer, the wafer further including scribe lines between the chips;
forming a first patterned dielectric layer on the passivation layer to expose the chip pads; and
forming a second patterned dielectric layer on the first patterned dielectric layer to expose the chip pads, wherein the second patterned dielectric layer has an embossed portion where a ball pad is to be formed. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for a wafer level chip scale package (CSP) comprising:
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providing a semiconductor wafer, the semiconductor wafer including semiconductor chips each having chip pads and a passivation layer;
forming a first dielectric layer on the passivation layer;
patterning the first dielectric layer to expose the chip pads;
forming a second dielectric layer on the patterned first dielectric layer; and
patterning the second dielectric layer to expose the chip pads, wherein the first and second patterned dielectric layers form a ball pad area, in which the second patterned dielectric layer has a non-planar surface. - View Dependent Claims (11, 12)
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13. A wafer level chip scale package (CSP), comprising:
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a semiconductor chip having chip pads and a passivation layer exposing chip pads;
a first patterned dielectric layer disposed on the passivation layer; and
a second patterned dielectric layer, the first and second patterned dielectric layers exposing the chip pads, wherein the first and second patterned dielectric layers have an embossed portion comprising a concave portion and a convex portion, the concave portion exposing a portion of the first patterned dielectric layer where a ball pad is to be formed, the convex portion being formed of the second patterned dielectric layer. - View Dependent Claims (14, 15, 16, 17)
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Specification