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Method of making metallization and contact structures in an integrated circuit using a timed trench etch

  • US 20040082182A1
  • Filed: 10/21/2003
  • Published: 04/29/2004
  • Est. Priority Date: 06/15/2000
  • Status: Abandoned Application
First Claim
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1. A method for forming metallization and contact structures in an integrated circuit comprising:

  • a) etching a trench dielectric layer of a composite structure comprising in sequential order;

    i) a semiconductor substrate comprising an active region, a gate structure thereover, and dielectric spacers adjacent to said gate structure;

    ii) a contact dielectric layer; and

    iii) a trench dielectric layer;

    to form a trench in said trench dielectric layer under etch conditions which do not substantially etch said contact dielectric layer;

    b) etching said contact dielectric layer under conditions which do not substantially etch said contact dielectric layer;

    substantially damage said gate structure to form a first contact opening that exposes a region of said semiconductor substrate and a portion of at least one of said dielectric spacers; and

    c) depositing a conductive material into said contact opening and said trench.

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