Plasma processes for depositing low dielectric constant films

• US 20040082199A1
• Filed: 08/26/2003
• Published: 04/29/2004
• Est. Priority Date: 02/11/1998
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Lu, Yung-Cheng, Cheung, David, Barnes, Michael, Ishikawa, Tetsuya, Jeng, Shin-Puu, Yau, Wai-Fan, Mandal, Robert P., Poon, Tze Wing, Liu, Kuo-Wei, Willecke, Ralf B., Moghadam, Farhad
• Granted Patent: US 6,869,896 B2
• Time in Patent Office: Days
• US Class Current: 438/789
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02203 the layer being porous
• CPC Class Codes: H01L 21/02208 the precursor containing a compound comprising Si
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/02304 formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
• CPC Class Codes: H01L 21/02362 formation of intermediate layers, e.g. capping layers or diffusion barriers
• CPC Class Codes: H01L 21/31612 on a silicon body
• CPC Class Codes: H01L 21/76801 characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
• CPC Class Codes: H01L 21/76808 involving intermediate temporary filling with material
• CPC Class Codes: H01L 21/7681 involving one or more buried masks
• CPC Class Codes: H01L 21/76829 characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
• CPC Class Codes: H01L 21/76832 Multiple layers
• CPC Class Codes: H01L 21/76834 formation of thin insulating films on the sidewalls or on top of conductors H01L21/76831 takes precedence
• CPC Class Codes: H01L 21/76835 Combinations of two or more different dielectric layers having a low dielectric constant H01L21/76832 takes precedence
• CPC Class Codes: H01L 2221/1031 Dual damascene by forming vias in the via-level dielectric prior to deposition of the trench-level dielectric
• CPC Class Codes: Y10T 428/24926 including ceramic, glass, porcelain or quartz layer
• CPC Class Codes: Y10T 428/31663 As siloxane, silicone or silane

Abstract

A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas comprising carbon at a constant RF power level. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.

Claims

1. A method for depositing a low dielectric constant film on a substrate, comprising reacting two or more organosiloxanes, wherein at least one of the organosiloxanes is a cyclic organosiloxane comprising C, H, and O, while applying RF power, wherein the low dielectric constant film comprises silicon-carbon bonds and a dielectric constant of about 3 or less.

2. The method of claim 1, wherein the at least one cyclic organosiloxane comprising C, H, and O comprises a ring comprising oxygen.

3. The method of claim 2, wherein the at least one cyclic organosiloxane comprising C, H, and O is selected from the group consisting of 1,3,5,7-tetramethylcyclotetrasiloxane and octamethylcyclotetrasiloxane.

4. The method of claim 1, wherein the two or more organosiloxanes are selected from the group consisting of 1,3,5,7-tetramethylcyclotetrasiloxane, octamethylcyclotetrasiloxane, 1,3,5,7,9-pentamethylcyclopentasiloxane, and 1,3,5,7-tetrasilano-2,6-dioxy-4,8-dimethylene.

5. The method of claim 1, wherein the two or more organosiloxanes are reacted with an oxidizing gas.

6. The method of claim 5, wherein the oxidizing gas is selected from the group consisting of oxygen, ozone, nitrous oxide, carbon dioxide, and water.

7. The method of claim 1, wherein the RF power is pulsed to increase the porosity of the film.

8. A method for depositing a low dielectric constant film on a substrate, comprising reacting two or more organosilanes, wherein at least one of the organosilanes is a cyclic organosilane, while applying RF power, wherein the low dielectric constant film comprises silicon-carbon bonds and a dielectric constant of about 3 or less.

9. The method of claim 8, wherein the cyclic organosilane is 1,3,5-trisilano-2,4,6-trimethylene.

10. The method of claim 9, wherein the two or more organosilanes further comprise an organosilane selected from the group consisting of methylsilane, dimethylsilane, trimethylsilane, dimethylsilanediol, ethylsilane, phenylsilane, diphenylsilane, diphenylsilanediol, methylphenylsilane, disilanomethane, bis(methylsilano)methane, 1,2-disilanoethane, 1,2-bis(methylsilano)ethane, and 2,2-disilanopropane.

11. The method of claim 8, wherein the two or more organosilanes are reacted with an oxidizing gas.

12. The method of claim 11, wherein the oxidizing gas is selected from the group consisting of oxygen, ozone, nitrous oxide, carbon dioxide, and water.

13. The method of claim 8, wherein the RF power is pulsed to increase the porosity of the film.

14. The method of claim 8, wherein at least one of the two or more organosilanes comprises oxygen.

15. A method for depositing a low dielectric constant film on a substrate, comprising reacting two or more organosiloxanes, wherein a first organosiloxane of the two or more organosiloxanes is cyclic and comprises C, H, and O and a ring comprising carbon and oxygen, while applying RF power, wherein the low dielectric constant film comprises silicon-carbon bonds and a dielectric constant of about 3 or less.

16. The method of claim 15, wherein the first organosiloxane is 1,3,5,7-tetrasilano-2,6-dioxy-4,8-dimethylene.

17. The method of claim 15, wherein a second organosiloxane of the two or more organosiloxanes is selected from the group consisting of 1,3-dimethyldisiloxane, 1,1,3,3-tetramethyldisiloxane, hexamethyldisiloxane, 1,3-bis(silanomethylene)disiloxane, bis(1-methyidisiloxanyl)methane, 2,2-bis(1-methyldisiloxanyl)propane, 1,3,5,7-tetramethylcyclotetrasiloxane, octamethylcyclotetrasiloxane, and 1,3,5,7,9-pentamethylcyclopentasiloxane.

18. The method of claim 15, wherein the two or more organosiloxanes are reacted with an oxidizing gas.

19. The method of claim 18, wherein the oxidizing gas is selected from the group consisting of oxygen, ozone, nitrous oxide, carbon dioxide, and water.

20. The method of claim 15, wherein the RF power is pulsed to increase the porosity of the film.