Plasma CVD apparatus for large area CVD film
First Claim
1. A plasma CVD apparatus comprising:
- first and second electrodes;
neutral gas introduction pipes; and
a plasma confining electrode interposed between said first and second electrodes to separate a plasma generation region and a substrate processing region, wherein said plasma confining electrode has a hollow structure defined by an upper electrode plate, and a lower electrode plate, and has gas diffusing plates provided in the hollow structure, and has radical passage holes provided to supply radicals from said plasma generation region into said substrate processing region while isolating from a neutral gas, said plasma confining electrode is connected to said neutral gas introduction pipes, and a plurality of neutral gas passage holes are provided for each of said lower electrode plate and said gas diffusing plates to supply said neutral gas into said substrate processing region, and a total opening area of said plurality of neutral gas passage holes in said gas diffusing plate on a side of said upper electrode plate is smaller than that of said plurality of neutral gas passage holes in said gas diffusing plate on a side of said lower electrode plate.
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Abstract
A plasma CVD apparatus includes first and second electrodes, neutral gas introduction pipes, and a plasma confining electrode interposed between the first and second electrodes to separate a plasma generation region and a substrate processing region. The plasma confining electrode has a hollow structure defined by an upper electrode plate, and a lower electrode plate, and has gas diffusing plates provided in the hollow structure, and has radical passage holes provided to supply radicals from the plasma generation region into the substrate processing region while isolating from a neutral gas. The plasma confining electrode is connected to the neutral gas introduction pipes, and a plurality of neutral gas passage holes are provided for each of the lower electrode plate and the gas diffusing plates to supply the neutral gas into the substrate processing region. A total opening area of the plurality of neutral gas passage holes in the gas diffusing plate on a side of the upper electrode plate is smaller than that of the plurality of neutral gas passage holes in the gas diffusing plate on a side of the lower electrode plate.
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Citations
26 Claims
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1. A plasma CVD apparatus comprising:
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first and second electrodes;
neutral gas introduction pipes; and
a plasma confining electrode interposed between said first and second electrodes to separate a plasma generation region and a substrate processing region, wherein said plasma confining electrode has a hollow structure defined by an upper electrode plate, and a lower electrode plate, and has gas diffusing plates provided in the hollow structure, and has radical passage holes provided to supply radicals from said plasma generation region into said substrate processing region while isolating from a neutral gas, said plasma confining electrode is connected to said neutral gas introduction pipes, and a plurality of neutral gas passage holes are provided for each of said lower electrode plate and said gas diffusing plates to supply said neutral gas into said substrate processing region, and a total opening area of said plurality of neutral gas passage holes in said gas diffusing plate on a side of said upper electrode plate is smaller than that of said plurality of neutral gas passage holes in said gas diffusing plate on a side of said lower electrode plate. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A plasma CVD apparatus comprising:
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first and second electrodes;
neutral gas introduction pipes; and
a plasma confining electrode interposed between said first and second electrodes to separate a plasma generation region and a substrate processing region, wherein said plasma confining electrode has a hollow structure defined by an upper electrode plate, and a lower electrode plate, and has gas diffusing plates provided in the hollow structure, and has radical passage holes provided to supply radicals from said plasma generation region into said substrate processing region while isolating from a neutral gas, said plasma confining electrode is connected to said neutral gas introduction pipes, and a plurality of neutral gas passage holes are provided for each of said lower electrode plate and said gas diffusing plates to supply said neutral gas into said substrate processing region, and a distribution density of opening area consisting of said plurality of neutral gas passage holes is higher in a central portion of each of said gas diffusing plates than in a peripheral portion thereof. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A plasma CVD apparatus comprising:
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first and second electrodes;
neutral gas introduction pipes;
a plasma confining electrode interposed between said first and second electrodes to separate a plasma generation region; and
a gas supply section interposed between said plasma confining electrode and said second electrode to supply said neutral gas, wherein said gas supply section has a hollow structure defined by an upper plate and a lower plate, and has gas diffusing plates provided in the hollow structure, and has radical passage holes, said gas supply section is connected to said neutral gas introduction pipes, and a plurality of neutral gas passage holes are provided for each of said lower plate and said gas diffusing plates to supply said neutral gas into said substrate processing region, and a total opening area of said plurality of neutral gas passage holes in said gas diffusing plate on a side of said upper plate of said gas supply section is smaller than that of said plurality of neutral gas passage holes in said gas diffusing plate on a side of said lower plate of said gas supply section. - View Dependent Claims (16, 17, 18, 19, 20)
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21. A plasma CVD apparatus comprising:
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first and second electrodes;
neutral gas introduction pipes;
a plasma confining electrode interposed between said first and second electrodes to separate a plasma generation region; and
a gas supply section interposed between said plasma confining electrode and said second electrode to supply said neutral gas, wherein said gas supply section has a hollow structure defined by an upper plate and a lower plate, and has gas diffusing plates provided in the hollow structure, and has radical passage holes, said gas supply section is connected to said neutral gas introduction pipes, and a plurality of neutral gas passage holes are provided for each of said lower plate and said gas diffusing plates to supply said neutral gas into said substrate processing region, and a distribution density of opening area consisting of said plurality of neutral gas passage holes is higher in a central portion of each of said gas diffusing plates than in a peripheral portion thereof. - View Dependent Claims (22, 23, 24, 25, 26)
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Specification