Please download the dossier by clicking on the dossier button x
×

Apparatus and method for controlling etch depth

  • US 20040084406A1
  • Filed: 09/25/2002
  • Published: 05/06/2004
  • Est. Priority Date: 09/25/2002
  • Status: Active Grant
First Claim
Patent Images

1. A method for etching a feature having a feature depth in a layer of a wafer, the method comprising:

  • etching to a first depth of the feature at a first etching rate;

    etching from the first depth to a second depth at a second etching rate, the second etching rate being slower than the first etching rate;

    optically determining when the second depth has reached the feature depth; and

    stopping etching the feature.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×