Semiconductor device and method of fabricating the same
First Claim
1. A semiconductor device comprising:
- a first substrate;
a second substrate; and
a plurality of columnar spacers disposed between said first substrate and said second substrate, each of said columnar spacers having at least an upper surface, a side surface, and an edge between said upper surface and said side surface, wherein said upper surface faces a surface of said second substrate, and an alignment film which covers said columnar spacers wherein a radius R of curvature of said edge is 2 μ
m or less.
0 Assignments
0 Petitions
Accused Products
Abstract
There is provided a high quality liquid crystal panel having a thickness with high accuracy, which is designed, without using a particulate spacer, within a free range in accordance with characteristics of a used liquid crystal and a driving method, and is also provided a method of fabricating the same. The shape of a spacer for keeping a substrate interval constant is made such that it is a columnar shape, a radius R of curvature is 2 μm or less, a height H is 0.5 μm to 10 μm, a diameter is 20 μm or less,.and an angle α is 65° to 115°. By doing so, it is possible to prevent the lowering of an opening rate and the lowering of light leakage due to orientation disturbance.
-
Citations
69 Claims
-
1. A semiconductor device comprising:
-
a first substrate;
a second substrate; and
a plurality of columnar spacers disposed between said first substrate and said second substrate, each of said columnar spacers having at least an upper surface, a side surface, and an edge between said upper surface and said side surface, wherein said upper surface faces a surface of said second substrate, and an alignment film which covers said columnar spacers wherein a radius R of curvature of said edge is 2 μ
m or less. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
-
-
23. A semiconductor device comprising:
-
a first substrate;
a second substrate;
a plurality of columnar spacers disposed between said first substrate and said second substrate, each of said columnar spacers having at least an upper surface, a side surface, and an edge between said upper surface and said side surface, wherein said upper surface faces a surface of said second substrate, and an alignment film below said columnar spacers, wherein a radius R of curvature of said edge is 2 μ
m or less. - View Dependent Claims (24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44)
-
-
45. A method of fabricating a semiconductor device comprising:
-
forming a thin film transistor over a substrate;
forming a leveling film to cover said thin film transistor;
forming an opening in said leveling film to reach to said thin film transistor and forming a pixel electrode;
forming a columnar spacer comprising an insulating film over a contact portion where said thin film transistor is connected to said pixel electrode. - View Dependent Claims (46, 47, 48, 49)
-
-
50. A semiconductor device comprising:
-
a thin film transistor over a first substrate;
a pixel electrode electrically connected to said thin film transistor;
an alignment film over the pixel electrode;
a columnar spacer over said alignment film, said columnar spacer having at least an upper surface, a side surface, and an edge between said upper surface and said side surface, wherein said upper surface faces a surface of said second substrate and a radius R of curvature of said edge is 2 μ
m or less; and
a light-shielding film provided over said second substrate, wherein said columnar spacer is located below said light-shielding film. - View Dependent Claims (51, 52, 53, 54)
-
-
55. A semiconductor device comprising:
-
a thin film transistor over a first substrate;
a pixel electrode electrically connected to said thin film transistor in a contact hole;
an alignment film over said pixel electrode;
a columnar spacer on said contact hole, said columnar spacer having at least an upper surface, a side surface, and an edge between said upper surface and said side surface, wherein said upper surface faces a surface of said second substrate and a radius R of curvature of said edge is 2 μ
m or less; and
a light-shielding film provided over said second substrate, wherein said columnar spacer is located below said light-shielding film. - View Dependent Claims (56, 57, 58, 59)
-
-
60. A semiconductor device comprising:
-
a thin film transistor over a first substrate;
a pixel electrode electrically connected to said thin film transistor;
a columnar spacer over said first substrate, said columnar spacer having at least an upper surface, a side surface, and an edge between said upper surface and said side surface, wherein said upper surface faces a surface of said second substrate and a radius R of curvature of said edge is 2 μ
m or less;
an alignment film which covers said columnar spacer; and
a light-shielding film provided over said second substrate, wherein said columnar spacer is located below said light-shielding film. - View Dependent Claims (61, 62, 63, 64)
-
-
65. A semiconductor device comprising:
-
a thin film transistor over a first substrate;
a pixel electrode electrically connected to said thin film transistor in a contact hole;
a columnar spacer on said contact hole, said columnar spacer having at least an upper surface, a side surface, and an edge between said upper surface and said side surface, wherein said upper surface faces a surface of said second substrate and a radius R of curvature of said edge is 2 μ
m or less;
an alignment film which covers said columnar spacer; and
a light-shielding film provided over said second substrate, wherein said columnar spacer is located below said light-shielding film. - View Dependent Claims (66, 67, 68, 69)
-
Specification