Trench structure having one or more diodes embedded therein adjacent a PN junction and method of forming the same
First Claim
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1. A semiconductor structure comprising:
- a semiconductor region comprising a P-type region and a N-type region forming a PN junction therebetween; and
a first trench extending in the semiconductor region adjacent at least one of the P-type and N-type regions, the first trench having at least one diode therein.
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Abstract
In accordance with an embodiment of the invention, a semiconductor structure includes a semiconductor region having a P-type region and a N-type region forming a PN junction therebetween. A first trench extends in the semiconductor region adjacent at least one of the P-type and N-type regions. The first trench includes at least one diode therein.
70 Citations
64 Claims
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1. A semiconductor structure comprising:
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a semiconductor region comprising a P-type region and a N-type region forming a PN junction therebetween; and
a first trench extending in the semiconductor region adjacent at least one of the P-type and N-type regions, the first trench having at least one diode therein. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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24. A semiconductor structure comprising:
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a semiconductor region having a body region and a drift region forming a PN junction;
a first trench extending at least in the drift region; and
at least one diode in the first trench. - View Dependent Claims (25, 26, 27, 28, 29, 30, 31, 32)
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33. A semiconductor structure comprising:
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a substrate;
an epitaxial layer over and in contact with the substrate, the epitaxial layer having a body region and a drift region forming a PN junction, the drift region being of the same conductivity type as the substrate;
a plurality of laterally spaced trenches each extending through at least a portion of the drift region; and
a plurality of diodes in each of the plurality of trenches, the plurality of diodes in each trench being insulated from the drift region along the trench sidewalls, Wherein the plurality of diodes in each trench are reverse-biased during operation. - View Dependent Claims (34, 35, 36, 37, 38)
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39. A method of forming a semiconductor structure, comprising:
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forming a semiconductor region comprising a P-type region and a N-type region forming a PN junction therebetween;
forming a first trench extending in the semiconductor region adjacent at least one of the P-type and N-type regions; and
forming at least one diode in the first trench. - View Dependent Claims (40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59)
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60. A method of forming a semiconductor structure, comprising:
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forming an epitaxial layer over and in contact with a substrate, the epitaxial layer being of the same conductivity type as the substrate;
forming a body region in the epitaxial layer so that after forming the body region the epitaxial layer comprises a P-type region and an N-type region forming a PN junction therebetween, the body region being one of the P-type and N-type regions, and a drift region being the other one of the P-type and N-type regions, the drift region being of the same conductivity type as the substrate;
forming a plurality of laterally spaced trenches each extending through at least a portion of the drift region; and
forming a plurality of diodes in each of the plurality of trenches. - View Dependent Claims (61, 62, 63, 64)
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Specification