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Semiconductor device including metal insulator semiconductor field effect transistor and method of manufacturing the same

  • US 20040084734A1
  • Filed: 09/10/2003
  • Published: 05/06/2004
  • Est. Priority Date: 11/06/2002
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a semiconductor substrate;

    an N-channel MISFET and a P-channel MISFET provided on the semiconductor substrate, each of the N- and P-channel MISFETs being isolated by an isolation region and having a gate insulating film;

    a first gate electrode film provided on the gate insulating film of the N-channel MISFET and composed of a first metal silicide;

    a second gate electrode film provided on the gate insulating film of the P-channel MISFET and composed of a second metal silicide made of a second metal material different from a first metal material composing the first metal silicide; and

    a work function of the first gate electrode film being lower than that of the second gate electrode film.

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