Device selection circuitry constructed with nanotube technology

• US 20040085805A1
• Filed: 10/24/2003
• Published: 05/06/2004
• Est. Priority Date: 07/25/2001
• Status: Active Grant

• Current Assignee: Nantero Incorporated
• Original Assignee: Nantero Incorporated
• Inventors: Brock, Darren K., Segal, Brent M., Rueckes, Thomas
• Granted Patent: US 7,120,047 B2
• Time in Patent Office: Days
• US Class Current: 365/145
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: G11C 13/025 using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
• CPC Class Codes: G11C 2213/77 Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
• CPC Class Codes: G11C 2213/81 Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires
• CPC Class Codes: G11C 23/00 Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor
• CPC Class Codes: H01H 1/0094 Switches making use of nanoelectromechanical systems [NEMS]
• CPC Class Codes: H01L 27/10 including a plurality of individual components in a repetitive configuration
• CPC Class Codes: H01L 27/1203 the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688
• CPC Class Codes: H10B 99/10 Memory cells having a cross-point geometry
• CPC Class Codes: Y10S 977/734 Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
• CPC Class Codes: Y10S 977/742 Carbon nanotubes, CNTs
• CPC Class Codes: Y10S 977/765 with specified cross-sectional profile, e.g. belt-shaped
• CPC Class Codes: Y10S 977/943 Information storage or retrieval using nanostructure

Abstract

A memory system having electromechanical memory cells and decoders is disclosed. A decoder circuit selects at least one of the memory cells of an array of such cells. Each cell in the array is a crossbar junction at least one element of which is a nanotube or a nanotube ribbon. The decoder circuit is constructed of crossbar junctions at least one element of each junction being a nanotube or a nanotube ribbon.

Claims

1. A selection system, comprising:

a set of devices;

a selector circuit to select at least one of the devices for access, the selector circuit comprising switches, each switch having a nanotube ribbon switching element.

2. The selection system of claim 1 wherein the selector circuit is arranged as a branching binary select system to provide electrical communication to the at least one selected device.

3. The selection system of claim 2 wherein the branching binary select system receives address information in true and complementary form on dual rail inputs.

4. The selection system of claim 1 wherein the selector circuit selects a device so that a sense current may be applied to the device.

5. The selection system of claim 1 wherein the selector circuit selects a device so that a sense signal may be applied to the selected device.

6. The selection system of claim 1 wherein the selector circuit selects a plurality of devices at a given time and wherein the selector circuit selects the plurality of devices so that a sense signal may be applied to the selected plurality of devices.

7. The selection system of claim 1 wherein the selector circuit is arranged for X and Y decoding of the set of devices.

8. The system of claim 1 wherein the set of devices is arranged as an array of devices.

9. The system of claim 1 wherein each switch is a non-volatile switch.

10. The system of claim 1 wherein the switch is an electromechanical switch having the nanotube ribbon switching element as a moving element of the electromechanical switch.