Precursor for chemical vapor deposition and thin film formation process using the same

• US 20040086643A1
• Filed: 11/05/2002
• Published: 05/06/2004
• Est. Priority Date: 11/05/2002
• Status: Abandoned Application

• Current Assignee: Adeka Corporation
• Original Assignee: Adeka Corporation
• Inventors: Sato, Hiroki, Onozawa, Kazuhisa
• Application Number:
  US10/287,481
• Publication Number:
  US 20040086643A1
• Time in Patent Office: Days
• US Class Current: 427/255.28
• CPC Class Codes: C07F 7/0803 Compounds with Si-C or Si-Si linkages
• CPC Class Codes: C07F 7/2204 Not belonging to the groups C07F7/2208 - C07F7/2296
• CPC Class Codes: C23C 16/401 containing silicon

Abstract

A precursor for chemical vapor deposition comprising a metal compound represented by formula (I):

wherein a plurality of R'"'"'s, which may be the same or different, each represent an alkyl group having 1 to 8 carbon atoms; and M represents a metallic element selected from the group consisting of titanium, germanium, zirconium, tin, hafnium, and lead.

Claims

1. A precursor for chemical vapor deposition comprising a metal compound represented by formula (I):

2. The precursor for chemical vapor deposition according to claim 1, wherein M in formula (I) is titanium or germanium.

3. The precursor for chemical vapor deposition according to claim 1, wherein M in formula (I) is zirconium or hafnium.

4. A process of producing a thin film by chemical vapor deposition comprising using a precursor according to any one of claims 1 to 3.

5. A process of producing a silicate optical glass thin film by chemical vapor deposition comprising using a precursor according to claim 2.

6. A process of producing a silicate ceramic thin film by chemical vapor deposition comprising using a precursor according to claim 3.