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Non-volatile memory device to protect floating gate from charge loss and method for fabricating the same

  • US 20040087086A1
  • Filed: 10/23/2003
  • Published: 05/06/2004
  • Est. Priority Date: 10/23/2002
  • Status: Active Grant
First Claim
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1. A method for fabricating a non-volatile memory device, the method comprising:

  • forming at least a pair of floating gate lines on a semiconductor substrate, the pair of floating gate lines defining a gap therebetween;

    etching a portion of the substrate between the pair of floating gate lines to form a trench therein;

    forming a gap-fill dielectric layer in the trench and also in the gap; and

    implanting the gap-fill dielectric layer.

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