Process for atomic layer deposition of metal films
First Claim
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1. A method of depositing a metal layer on a semiconductor substrate surface, the method comprising:
- growing a metal halide layer from a halogen-containing precursor and a metal-containing precursor on at least a portion of the surface; and
exposing the metal halide layer to a reducing agent to provide the metal layer.
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Abstract
In the present invention, a metal halide film is grown which is then reduced to the metal film rather than growing the metal film directly on the substrate surface. In certain embodiments, a metal halide film is grown from at two precursors: a halogen-containing precursor and a metal-containing precursor. The metal halide film is then exposed to a reducing agent to form the metal film. In certain preferred embodiments, the metal halide film is exposed to the reducing agent prior to the completion of the growing step.
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Citations
26 Claims
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1. A method of depositing a metal layer on a semiconductor substrate surface, the method comprising:
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growing a metal halide layer from a halogen-containing precursor and a metal-containing precursor on at least a portion of the surface; and
exposing the metal halide layer to a reducing agent to provide the metal layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 23)
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19. A method for forming a metal layer on a surface of a substrate, the method comprising:
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growing a metal halide layer on the surface by contacting the surface with a halogen-containing precursor and a metal-containing precursor wherein the halogen and the metal within the precursors react to form the metal halide layer; and
exposing the metal halide layer to a reducing agent to provide the metal layer. - View Dependent Claims (20, 21, 22)
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- 24. The method of claim 18 wherein the exposing step occurs after the completion of the forming step.
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24-1. A method of depositing a metal layer on a semiconductor substrate surface, the method comprising:
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growing a metal halide layer from a halogen-containing precursor comprising an acid and a metal-containing precursor on at a least a portion of the surface wherein the semiconductor substrate has a barrier layer to which the metal halide layer is grown thereupon; and
exposing the metal halide layer to a reducing agent to provide the metal layer.
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Specification