Power transistor
First Claim
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1. A power transistor having at least one trench transistor cell in a semiconductor body, comprising:
- a drain zone, a drift zone, a channel zone, and a source zone formed in each case successively and substantially horizontally in the semiconductor body;
the semiconductor body having a trench formed therein with a base and a defined body height opposite a pn junction between said drift zone and said channel zone;
a first dielectric layer cladding said trench substantially to said body height, and a gate oxide cladding said trench between said body zone and a semiconductor body surface; and
a field electrode extending in said trench substantially from said trench base to an upper edge of said first dielectric layer;
a gate electrode disposed substantially between said body height and the semiconductor body surface, said gate electrode having a lower edge with a profile at least partly different from horizontal; and
a second dielectric layer formed between said gate electrode and said field electrode.
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Abstract
The power transistor has a trench cell in a semiconductor body. A lower edge of the gate electrode has a profile which is not horizontal, i.e., not planar with respect to the field electrode.
164 Citations
8 Claims
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1. A power transistor having at least one trench transistor cell in a semiconductor body, comprising:
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a drain zone, a drift zone, a channel zone, and a source zone formed in each case successively and substantially horizontally in the semiconductor body;
the semiconductor body having a trench formed therein with a base and a defined body height opposite a pn junction between said drift zone and said channel zone;
a first dielectric layer cladding said trench substantially to said body height, and a gate oxide cladding said trench between said body zone and a semiconductor body surface; and
a field electrode extending in said trench substantially from said trench base to an upper edge of said first dielectric layer;
a gate electrode disposed substantially between said body height and the semiconductor body surface, said gate electrode having a lower edge with a profile at least partly different from horizontal; and
a second dielectric layer formed between said gate electrode and said field electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification
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Current AssigneeInfineon Technologies AG
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Original AssigneeInfineon Technologies AG
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InventorsHirler, Franz, Rieger, Walter, Tihanyi, Jenoe, Poelzl, Martin, Krumrey, Joachim, Henninger, Ralf
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Granted Patent
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Time in Patent OfficeDays
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Field of Search
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US Class Current257/500
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CPC Class CodesH01L 29/407 Recessed field plates, e.g....H01L 29/42376 characterised by the length...H01L 29/7813 with trench gate electrode,...
