Side wall passivation films for damascene cu/low k electronic devices
First Claim
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1. A method for processing a substrate having a patterned photoresist thereon, comprising:
- etching a barrier layer and a low k dielectric layer of the substrate using the patterned photoresist as a mask to form an opening having sidewalls and extending through the barrier layer and the low k dielectric layer to an underlying metal feature or metal layer of the substrate;
depositing a pre-liner on the substrate, wherein the pre-liner is deposited over the photoresist and the sidewalls of the opening, and wherein the pre-liner is selected from the group consisting of oxygen-doped silicon carbide, oxygen and nitrogen-doped silicon carbide, silicon carbide, silicon nitride, silicon dioxide, silicon oxynitride, silicon, aluminum oxide, and combinations thereof;
depositing a liner selected from the group consisting of tantalum, tantalum nitride, tungsten, tungsten nitride, platinum, ruthenium, and combinations thereof on the pre-liner;
removing the photoresist, the pre-liner, and the liner from horizontal surfaces of the substrate; and
then depositing a seed layer on the substrate.
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Abstract
Methods and apparatus for protecting the dielectric layer sidewalls of openings, such as vias and trenches, in semiconductor substrates are provided. A pre-liner and a liner are deposited over the sidewalls of the openings as part of integrated processing sequences that either do not remove the photoresist until subsequent processing or remove the photoresist with a plasma etch that does not contaminate the sidewalls of the openings.
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Citations
30 Claims
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1. A method for processing a substrate having a patterned photoresist thereon, comprising:
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etching a barrier layer and a low k dielectric layer of the substrate using the patterned photoresist as a mask to form an opening having sidewalls and extending through the barrier layer and the low k dielectric layer to an underlying metal feature or metal layer of the substrate;
depositing a pre-liner on the substrate, wherein the pre-liner is deposited over the photoresist and the sidewalls of the opening, and wherein the pre-liner is selected from the group consisting of oxygen-doped silicon carbide, oxygen and nitrogen-doped silicon carbide, silicon carbide, silicon nitride, silicon dioxide, silicon oxynitride, silicon, aluminum oxide, and combinations thereof;
depositing a liner selected from the group consisting of tantalum, tantalum nitride, tungsten, tungsten nitride, platinum, ruthenium, and combinations thereof on the pre-liner;
removing the photoresist, the pre-liner, and the liner from horizontal surfaces of the substrate; and
then depositing a seed layer on the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for processing a substrate having a patterned photoresist thereon, comprising:
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etching a barrier layer and a low k dielectric layer of the substrate using the patterned photoresist as a mask to form an opening having sidewalls and extending through the barrier layer and the low k dielectric layer to an underlying metal feature or metal layer of the substrate;
removing the photoresist from the low k dielectric layer with a hydrogen plasma, an oxygen-containing plasma, or a combination thereof;
depositing a pre-liner on the low k dielectric layer, wherein the pre-liner is selected from the group consisting of oxygen-doped silicon carbide, oxygen and nitrogen-doped silicon carbide, silicon carbide, silicon nitride, silicon dioxide, silicon oxynitride, silicon, aluminum oxide, and combinations thereof;
depositing a liner selected from the group consisting of tantalum, tantalum nitride, tungsten, tungsten nitride, platinum, ruthenium, and combinations thereof on the pre-liner;
removing the pre-liner and the liner from horizontal surfaces of the substrate;
and then depositing a seed layer on the substrate. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A computer storage medium containing software that, when executed, causes a computer to perform an operation in an integrated substrate processing system, the operation comprising:
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introducing a substrate having a patterned photoresist thereon into an integrated substrate processing system;
etching a barrier layer and a low k dielectric layer of the substrate using the patterned photoresist as a mask through to an underlying metal feature or metal layer of the substrate to form a hole having sidewalls;
depositing a pre-liner on the substrate, wherein the pre-liner is deposited over the photoresist, the sidewalls, and the bottom of the hole, and wherein the pre-liner is selected from the group consisting of oxygen-doped silicon carbide, oxygen and nitrogen-doped silicon carbide, silicon carbide, silicon nitride, silicon dioxide, silicon oxynitride, silicon, aluminum oxide, and combinations thereof;
depositing a liner selected from the group consisting of tantalum, tantalum nitride, tungsten, tungsten nitride, platinum, ruthenium, and combinations thereof on the pre-liner;
removing the photoresist from the substrate;
removing the pre-liner and liner from horizontal surfaces of the substrate; and
thendepositing a seed layer on the substrate, wherein the substrate is not removed from the integrated processing system until after the depositing a seed layer. - View Dependent Claims (18, 19, 20, 21, 22, 23)
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24. A computer storage medium containing software that, when executed, causes a computer to perform an operation in an integrated substrate processing system, the operation comprising:
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introducing a substrate having a patterned photoresist thereon into an integrated processing system;
etching a barrier layer and a low k dielectric layer of the substrate using the patterned photoresist as a mask to form an opening having sidewalls and extending through the barrier layer and the low k dielectric layer to an underlying metal feature or metal layer of the substrate;
removing the photoresist from the low k dielectric layer with a hydrogen plasma and/or an oxygen-containing plasma;
depositing a pre-liner on the low k dielectric layer, wherein the pre-liner is selected from the group consisting of oxygen-doped silicon carbide, oxygen and nitrogen-doped silicon carbide, silicon carbide, silicon nitride, silicon dioxide, silicon oxynitride, silicon, aluminum oxide, and combinations thereof;
depositing a liner selected from the group consisting of tantalum, tantalum nitride, tungsten, tungsten nitride, platinum, ruthenium, and combinations thereof on the pre-liner;
removing the pre-liner and the liner from horizontal surfaces of the substrate; and
thendepositing a seed layer on the substrate, wherein the substrate is not removed from the integrated processing system until after the depositing a seed layer. - View Dependent Claims (25, 26, 27, 28, 29, 30)
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Specification