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Side wall passivation films for damascene cu/low k electronic devices

  • US 20040092095A1
  • Filed: 11/12/2002
  • Published: 05/13/2004
  • Est. Priority Date: 11/12/2002
  • Status: Active Grant
First Claim
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1. A method for processing a substrate having a patterned photoresist thereon, comprising:

  • etching a barrier layer and a low k dielectric layer of the substrate using the patterned photoresist as a mask to form an opening having sidewalls and extending through the barrier layer and the low k dielectric layer to an underlying metal feature or metal layer of the substrate;

    depositing a pre-liner on the substrate, wherein the pre-liner is deposited over the photoresist and the sidewalls of the opening, and wherein the pre-liner is selected from the group consisting of oxygen-doped silicon carbide, oxygen and nitrogen-doped silicon carbide, silicon carbide, silicon nitride, silicon dioxide, silicon oxynitride, silicon, aluminum oxide, and combinations thereof;

    depositing a liner selected from the group consisting of tantalum, tantalum nitride, tungsten, tungsten nitride, platinum, ruthenium, and combinations thereof on the pre-liner;

    removing the photoresist, the pre-liner, and the liner from horizontal surfaces of the substrate; and

    then depositing a seed layer on the substrate.

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