×

Sidewall smoothing in high aspect ratio/deep etching using a discrete gas switching method

  • US 20040092118A1
  • Filed: 08/12/2003
  • Published: 05/13/2004
  • Est. Priority Date: 08/16/2002
  • Status: Active Grant
First Claim
Patent Images

1. An apparatus for improved gas switching, said apparatus comprising:

  • a plasma chamber;

    at least one plasma source for producing a plasma within said plasma chamber;

    a substrate holder positioned within said plasma chamber;

    an etchant gas supply having an associated gas inlet for providing an etchant gas to said plasma chamber and an associated gas bypass for exhausting said etchant gas;

    a deposition gas supply having an associated gas inlet for providing a deposition gas to said plasma chamber and an associated gas bypass for exhausting said deposition gas; and

    a gas control switch for controlling at least one of said etchant gas supply and said deposition gas supply such that said gas inlet and said gas bypass of said at least one gas supply are configured such that gas flows bypass the chamber when said gas inlet is closed.

View all claims
  • 18 Assignments
Timeline View
Assignment View
    ×
    ×