Crystal-less oscillator transceiver

• US 20040092234A1
• Filed: 11/12/2002
• Published: 05/13/2004
• Est. Priority Date: 11/12/2002
• Status: Active Grant

• Current Assignee: Avago Technologies International Sales Pte Limited (Broadcom, Inc.)
• Original Assignee: Nokia Corporation
• Inventors: Pohjonen, Helena
• Granted Patent: US 6,944,432 B2
• Time in Patent Office: Days
• US Class Current: 455/91
• CPC Class Codes: H03B 5/326 the resonator being an acoustic wave device, e.g. SAW or BAW device
• CPC Class Codes: H03L 7/099 concerning mainly the controlled oscillator of the loop
• CPC Class Codes: H03L 7/1976 using a phase accumulator for controlling the counter or frequency divider

Abstract

A radio frequency (RF) transceiver of the type having at least one radio frequency integrated chip (RFIC), a reference oscillator and a phase-locked oscillator, utilizes non-crystal resonator structures in place of crystal oscillators to produce the reference oscillator frequency functionality and the phase-locked oscillator frequency functionality. Film bulk acoustic resonator (FBAR) structures including bulk acoustic wave (BAW) resonators are monolithically integrated or flip chipped with the RFIC to reduce size, weight and cost of the transceiver. The RF transceiver may be a TDMA or CDMA transceiver.

Claims

1. A radio frequency (RF) transceiver of the type having at least one radio frequency integrated chip (RFIC), a reference oscillator and a phase-locked oscillator, characterized in that said reference oscillator comprises a first resonator structure and said phase-locked oscillator comprises a second resonator structure.

2. The RF transceiver according to claim 1 wherein said first resonator structure is a first film bulk acoustic resonator (FBAR) structure and said second resonator structure is a second film bulk acoustic resonator (FBAR) structure.

3. The RF transceiver according to claim 2 wherein said first and second FBAR structures are monolithically integrated with the RFIC chip.

4. The RF transceiver according to claim 2 wherein said first and second FBAR structures are flip chipped on the RFIC chip.

5. The RF transceiver according to claim 1 wherein said first resonator structure and said second resonator structure are bulk acoustic wave resonator (BAW) structures.

6. The RF transceiver according to claim 1 further characterized in that the quality factor (Q) of said first and second resonator structures has a value in the range of about 400 to 8000.

7. The RF transceiver according to claim 3 characterized in that the RFIC chip further includes a phase-locked loop (PLL) chip.

8. The RF transceiver according to claim 1 further characterized in that said second resonator structure comprises a low Q based UHFVCO and said first resonator structure is a first film bulk acoustic resonator (FBAR) structure monolithically integrated with a first radio frequency integrated chip (RFIC) to define a high frequency (>

3 gigahertz) reference oscillator frequency functionality.

9. The RF transceiver according to claim 1 further characterized in that said second resonator structure comprises a low Q based UHFVCO and said first resonator structure is a first film bulk acoustic resonator (FBAR) structure flip chipped with a first radio frequency integrated chip (RFIC) to define a high frequency (>

3 gigahertz) reference oscillator frequency functionality.

10. The RF transceiver according to claim 1 further characterized by a TDMA RF transceiver.

11. The RF transceiver according to claim 1 further characterized by a CDMA RF transceiver.