×

Biolar transistor

  • US 20040094823A1
  • Filed: 09/05/2003
  • Published: 05/20/2004
  • Est. Priority Date: 03/07/2001
  • Status: Active Grant
First Claim
Patent Images

1. A bipolar transistor comprising a SiGe base layer and an emitter layer, wherein a non-doped SiGe layer and a non-doped Si layer are provided between the SiGe base layer and the emitter layer, the non-doped SiGe layer is adjacent to the SiGe base layer, and the non-doped Si layer is adjacent to the non-doped SiGe layer and also is adjacent to the emitter layer.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×