Wiring structure on semiconductor substrate and method of fabricating the same
First Claim
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1. A semiconductor device comprising:
- a semiconductor substrate having a plurality of connecting pads on one surface;
an insulating film formed on one surface of the semiconductor substrate, and having holes each corresponding to one of the connecting pads, an upper surface, and a recess having a bottom surface depressed from the upper surface in a direction of thickness; and
interconnections formed on the upper surface of the insulating film or on the bottom surface of the recess, and connected to the connecting pads through the holes in the insulating film.
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Abstract
A semiconductor device includes a semiconductor substrate having a plurality of connecting pads on one surface, an insulating film formed on one surface of the semiconductor substrate. The insulating film has holes each corresponding to one of the connecting pads, and a recess having a bottom surface depressed from the upper surface in the direction of thickness. Interconnections are formed on an upper surface of the insulating film or on the bottom surface of the recess, and connected to the connecting pads through the holes in the insulating film.
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Citations
35 Claims
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1. A semiconductor device comprising:
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a semiconductor substrate having a plurality of connecting pads on one surface;
an insulating film formed on one surface of the semiconductor substrate, and having holes each corresponding to one of the connecting pads, an upper surface, and a recess having a bottom surface depressed from the upper surface in a direction of thickness; and
interconnections formed on the upper surface of the insulating film or on the bottom surface of the recess, and connected to the connecting pads through the holes in the insulating film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A semiconductor device fabrication method comprising:
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preparing a semiconductor substrate having a plurality of connecting pads on one surface;
forming, on one surface of the semiconductor substrate, an insulating film having holes each corresponding to one of the connecting pads, an upper surface, and a recess having a bottom surface depressed from the upper surface in a direction of thickness; and
forming, on the upper surface of the insulating film or on the bottom surface of the recess, interconnections connected to the connecting pads through the holes in the insulating film. - View Dependent Claims (24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35)
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Specification