Low voltage multi-junction vertical cavity surface emitting laser
First Claim
1. A method of fabricating an optical device with a wavelength of operation, the method comprising the steps of:
- providing a first substrate;
epitaxially growing a light emitting region which emits light at the wavelength of operation, the light emitting region being positioned on the first substrate wherein the light emitting region includes an active region and a first n-type conductivity contact region on one surface and a p-type conductivity region on an opposite surface, a p/n tunnel junction positioned on the p-type conductivity region with a p+ layer abutting the latter, and a second n-type conductivity contact region positioned on an opposite side of the p/n tunnel junction and abutting an n+ layer of the latter;
epitaxially growing a first stack of alternate layers of a first material with a first index of refraction and a second material with a second index of refraction positioned on the light emitting region wherein the first index of refraction is substantially different from the second index of refraction so that the first stack of alternate layers forms a first mirror;
solder bonding a second substrate to the first stack of alternate layers;
removing the first substrate to substantially expose the light emitting region; and
forming a second stack of alternate layers of a third material with a third index of refraction and a fourth material with a fourth index of refraction positioned on the light emitting region wherein the third index of refraction is substantially different from the fourth index of refraction so that the second stack of alternate layers forms a second mirror.
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Accused Products
Abstract
An optical device includes a light emitting region which emits light at the wavelength of operation, the light emitting region includes at least one active region. An n-type conductivity contact region is positioned on one surface of the active region and a p-type conductivity contact region is positioned on an opposite surface. The p surface of a p/n tunnel junction is positioned on the opposite surface of the p-type conductivity contact region and an n-type conductivity contact region is positioned on the n surface. The light emitting region is positioned within an optical gain cavity which includes a mirror and an opposed mirror and a substrate solder bonded using a bonding layer to at least one of the mirror and the opposed mirror.
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Citations
20 Claims
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1. A method of fabricating an optical device with a wavelength of operation, the method comprising the steps of:
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providing a first substrate;
epitaxially growing a light emitting region which emits light at the wavelength of operation, the light emitting region being positioned on the first substrate wherein the light emitting region includes an active region and a first n-type conductivity contact region on one surface and a p-type conductivity region on an opposite surface, a p/n tunnel junction positioned on the p-type conductivity region with a p+ layer abutting the latter, and a second n-type conductivity contact region positioned on an opposite side of the p/n tunnel junction and abutting an n+ layer of the latter;
epitaxially growing a first stack of alternate layers of a first material with a first index of refraction and a second material with a second index of refraction positioned on the light emitting region wherein the first index of refraction is substantially different from the second index of refraction so that the first stack of alternate layers forms a first mirror;
solder bonding a second substrate to the first stack of alternate layers;
removing the first substrate to substantially expose the light emitting region; and
forming a second stack of alternate layers of a third material with a third index of refraction and a fourth material with a fourth index of refraction positioned on the light emitting region wherein the third index of refraction is substantially different from the fourth index of refraction so that the second stack of alternate layers forms a second mirror. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. An optical device with a wavelength of operation, the device comprising:
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a light emitting region which emits light at the wavelength of operation, the light emitting region including an active region and a first n-type conductivity contact region on one surface and a p-type conductivity region on an opposite surface, a p/n tunnel junction positioned on the thin p-type conductivity region and a second n-type conductivity contact region positioned on an opposite side of the p/n tunnel junction;
a first mirror stack positioned on the first n-type conductivity contact region and a second mirror stack positioned on the second n-type conductivity contact region; and
a substrate solder bonded using a bonding layer to at least one of the first mirror stack and the second mirror stack. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A method of fabricating a multijunction laser with a wavelength of operation, the method comprising the steps of:
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providing a first substrate;
epitaxially growing a light emitting region which emits light at the wavelength of operation, the light emitting region being positioned on the first substrate wherein the light emitting region includes a plurality of active regions with a plurality of quantum structure layers each sandwiched between cladding regions and wherein each of the plurality of active regions is bounded by alternate n-type conductivity and thin p-type conductivity contact regions, and further including a p/n tunnel junction with an n-type contact region on the n surface and the p surface positioned on at least one of the P-type contact regions;
epitaxially growing a first stack of alternate layers of a first material with a first index of refraction and a second material with a second index of refraction positioned on the light emitting region wherein the first index of refraction is substantially different from the second index of refraction so that the first stack of alternate layers forms a first mirror;
solder bonding a second substrate to the first stack of alternate layers;
removing the first substrate to substantially expose the at least one light emitting region; and
epitaxially growing a second stack of alternate layers of a third material with a third index of refraction and a fourth material with a fourth index of refraction positioned on the light emitting region wherein the third index of refraction is substantially different from the fourth index of refraction so that the second stack of alternate layers forms a second mirror. - View Dependent Claims (17, 18, 19, 20)
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Specification