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Gas injection apparatus for semiconductor processing system

  • US 20040099378A1
  • Filed: 11/17/2003
  • Published: 05/27/2004
  • Est. Priority Date: 11/15/2002
  • Status: Active Grant
First Claim
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1. A gas injection apparatus for injecting a reactive gas into a reaction chamber of a semiconductor processing system, the apparatus comprising:

  • an injector disposed to contact an inner surface of a wall of the reaction chamber, the injector having a plurality of nozzles penetrating it, through which the reactive gas is injected into the reaction chamber;

    a gas inlet penetrating through the wall of the reaction chamber;

    a manifold disposed between the wall of the reaction chamber and the injector, for supplying the reactive gas flowing through the gas inlet to each of the plurality of nozzles; and

    gas channels arranged on at least two levels in the manifold, the at least two levels equalizing lengths of gas paths connecting the gas inlet to the plurality of nozzles.

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